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September, 2018

Aleksandrov et al published a paper "InAsSb Diode Optical Pairs for Real-Time Carbon-Dioxide Sensors"

DOI: 10.1134/S1063784218090025

DOI: 10.21883/JTF.2018.09.46433.35-18 (Paper in Russian)

August , 2018   Nina Dyakonova presented a poster report on "Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes at 300K and 77K"  at the 34th International conference on the physics of semiconductors, 29th - 3rd August, 2018, Montpellier, France.
May 25, 2018  

Maxim Remennyi will present 2 reports on "Low frequency noise in p-InAsSbP/n-InAs photodiodes" and on " P-InAsSbP/n-InAs/N-InAsSbP  broad band flip-chip DH photodiodes"

at the XXV INTERNATIONAL SCIENTIFIC AND TECHNICAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES. MOSCOW May 24, 25, 26 2018.

April 30, 2018 The manuscript entitled "Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes" written by N Dyakonova et al has been accepted for publication in
April 25, 2018 Knowledge E has published report on  “Optoelectronic Methods of IR-Photometry in Solving Thermal and Physical Problems”  by S.E.Aleksandrov, G.A.Gavrilov, A.A.Kapralov, B.A. Matveev, K.L. Muratikov, and G.Yu.Sotnikova presented at the VII International Conference on Photonics and Information Optics (  KnE Energy & Physics, pages 349–361. DOI 10.18502/ken.v3i3.2048 )
March 29, 2018 RF patent office issued patents # 2647977, #2647978, #2647979 and #2647980 covering different aspects of mid-IR technology.
February 1, 2018

N. D. Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and A. A. Usikova have published  a paper “InAsSbP Photodiodes for 2.6–2.8-um Wavelengths” in Technical Physics, 2018, Vol. 63, No. 2, pp. 226–229.

DOI: 10.1134/S1063784218020172

January 9, 2018
The manuscript entitled "InAs0.7Sb0.3 bulk photodiodes operating at thermoelectric-cooler temperatures" (Original Paper, No. pssa.201700694R1) to Physica Status Solidi A: Applications and Materials Science
has been accepted for publication ( DOI: 10.1002/pssa.201700694 )
  2017
 
November 3, 2017 The paper by N.D. Il'inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus', A.A. Usikova, "P-InAsSbP/p- InAs0.88Sb0.12 /n- InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction" has been accepted for publication in  Infrared Physics & Technology (2018), doi:  https://doi.org/10.1016/j.infrared.2017.11.003
October 26, 2017 IOP Journal “Flexible and Printed Electronics” printed the paper "Time-resolved study of variable frequency microwave processing of silver nanoparticles printed onto plastic substrates" written by Zymelka D., Matveev B., Aleksandrov S., Sotnikova G., Gavrilov G., Saadaoui M. ( DOI: 10.1088/2058-8585/aa900a )
September 11, 2017 Matveev together with Mynbaev, Ivanov and  Marichev took part in Russian conference on photoelectrics in Novosibirsk.
June 13, 2017 RF patent office issued a patent # 2622239 (authors - S.E.Aleksandrov, G.A.Gavrilov, B.A.Matveev, M.A.Remennyy, G.Yu.Sotnikova) on device for distant temperature measurements (priority date - 18.05.2016).
May 31, 2017 Report of B.Matveev was nominated as one of the best reports at the 2-nd Congress on Sensors in Kronstadt (Russia).
February 7, 2017 RF patent office issued a patent # 2610073 (authors - S.E.Aleksandrov, G.A.Gavrilov, B.A.Matveev, M.A.Remennyy, G.Yu.Sotnikova) on IR photometer  (priority date - 01.03.2013).
February 1, 2017   The paper “Spatial Redistribution of Radiation in Flip-Chip Photodiodes Based on Double InAsSbP/InAs Heterostructures” (authors A.L. Zakgeim, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyy, N.M. Stus’, A.A. Usikova and A.E. Cherniakov) has been published in ,Semiconductors, 2017, Vol. 51, No. 2, pp. 260–266.
   

2016

 
September 21, 2016  

RF patent office issued a patent ¹ 2599905 (authors - Il`inskaya N.D., Matveev B.A., Remennyi M.A. and Usikova A.A.) on method  of producing mid-IR diodes (priority date - 11.05.2012).

September 21, 2016   Boris Matveev presented two reports at the 13th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-XIII) in Beijing from 18 to 22 September, 2016: "8×8 photodiode array based on Ð-InAsSbP/n-InAs single heterostructure" (oral) and "Dual band radiometric temperature measurements using InAs and InAsSb based photodiode" (poster).
September 16, 2016   G.Sotnikova has presented report on "Fast response IR sensors for ecology, medicine and security" at the 1-st Russian Conference "Physics towards life sciences" (in Russian).
August 30, 2016   The article "P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array" by P.N.Brunkov, N. D. Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus' and A. A. Usikova has been accepted for publication in Infrared Physics and Technology.
May 24-27,  2016   Maxim Remennyi  presented two reports ("Mid-IR 8×8 diode array based on  P-InAsSbP/n-InAs heterostructures" and "Photoelectrical properties of P-InAsSbP/n-InAs heterostructures with graded p-n junction") at  the 24-th Conference on night vision and optoelectronics in Moscow (In Russian).
May 24-27,  2016   Galina Sotnikova presented report on “InAs – InAsSb two-color photodiode sensors for low-temperature pyrometry” at  the 24-th Conference on night vision and optoelectronics in Moscow (in Russian).
May, 2016   Semiconductors issued a paper “Photodiode 1x64 Linear Array Based on a Double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs Heterostructure”  written by N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus' and A. A. Usikova (Semiconductors, 2016, Vol. 50, No. 5, pp. 646–651).
May 9, 2016   3 letters from Leningrad dated 1942 - a contribution to the memory of the World War II.

April 07, 2016

 

Paper "Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes"

by P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, N.G.Karpukhina, A.A.Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus’, A.A. Usikova has been accepted for publication in Infrared Physics and Technology.

   

2015

December 16, 2015   RF patent office issued a patent ¹ 2570603 (authors - Il`inskaya N.D., Matveev B.A. and Remennyi M.A.) on construction of the back-side illuminated PD (priority date - 23.12.2011).
November 25, 2015   Infrared Physics and Technology has published paper «InAsSbP/InAs(0.9)Sb(0.1)/InAs DH photodiodes (λ0.1 = 5.2 um, 300 K) operating in the 77-353 K temperature range» by Brunkov P.N., Il`inskaya N.D.,  Karandashev S.A., Lavrov A.A., Matveev B.A.,  Remennyi M.A., Stus` N.M. and Usikova A.A..
November 18, 2015   B.Matveev  presented report on "Mid-IR single and multielement photodiodes based on p-InAsSbP/n-InAs(Sb) heterostructures" (authors N. D. Il’inskaya, S. A. Karandashev, N.G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyy, N. M. Stus’ and A.A.Usikova ) at the second Russia-Byelorussia conference in the name of O.Losev (N.Novgorod, 17-19 November 2015).
October 16, 2015   B.Matveev is going to present report on DH InAs/InAsSb0.1/InAsSbP (λ0.1=5.2 um) PDs at the PHOTONICS 2015 conference in Novosibirsk (RF).
September 21- 27, 2015   M.Remennyy  presented report on 1x64 PD array (λ=4.2 um) at the "Distant Earth Monitoring" conference in Sochi (RF).
May 29, 2015   G.Yu.Sotnikova presented report on  «Radiometric temperature measurements using In(Ga)As(Sb) based photodiodes» at ‘Sensors Fusion 2015’(ADVANCED COMMERCIAL AND INDUSTRIAL SENSING INSTRUMENTS, TECHNOLOGIES AND APPLICATIONS) - THE 1st ALL-RUSSIAN CONGRESS in Saint-Petersburg – in legendary navy fortress Kronstadt.
May 28, 2015  

Journal PHOTONICS (#3, 2015) has published the paper by B. Matveev "On the Question of terminology in the medium wave infrared optoelectronics"

May 9, 2015   At least one photo from the Memories (see note from 7 May 2015) appeared at Nevskii prospect and Palace square in St.Petersburg during Bessmertnyi-polk action during the Victory Day.
May 7, 2015   Memories about the 1941-1945 war recorded by Matveev B. are now available in Russian.-
April 30, 2015   B. Matveev has published the paper "Surprises of Medium-Wave IR LEDs Based on À3Â5 Heterostructures".
April 23, 2015   Galina Sotnikova presented report at the 5-th conference "TEMPERATURE 2015" on temperature measurements in St.Petersburg. The report text (in Russian)
March  16, 2015  

Maxim Remennyy will present IoffeLED at the 10th Edition of the International Specialized Exhibition for Laser, Optical and Optoelectronic Technologies – PHOTONICS. WORLD OF LASERS AND OPTICS'2015

Moscow, March 16 – 19, 2015.

March 4, 2015   Report on "Radiometric temperature measurements using In(Ga)As(Sb) backside illuminated photodiodes" (G.Yu.Sotnikova et al) was presented by Galina Sotnikova on Wednesday, March 4, 2015, 17:00 – 17:15 h. at the Freiburg Infrared Colloquium.
   

2014

 December 12, 2014

 

Journal Prikladnaya Fizika has published the paper on the 3x3 matrix based on p-InAsSbP/n-InAs single heterostructure diodes.

 December 4, 2014

 

Journal PHOTONICS has published the review dedicated to the research of capabilities of mid-IR (3–5μm) LEDs based on À3Â5 heterostructures with respect to their use in optical gas analyzers.

 November 25, 2014

 

Boris Matveev presented short report on "Multispectral and multielement mid-IR LEDs and photodiodes for sensing applications" (10 min) at the seminar of the DATIS Project (Aalto University, Micronova, Espoo, Finland).

October 21, 2014  

IoffeLED joined RF state program “Development of fabrication processes for semiconductor materials for use in matrix photodetectors and thermal vision", contract # 14.576.21.0057.

July 29,  2014  

Abstract submitted to MIOMD-XII has been accepted for presentation at the conference.

ABSTRACT No. P-InAsSbP/n-InAs/n+-InAs photodiodes for operation at moderate cooling (150-220 K), B. Matveev [et al.] (sciencesconf.org:miomd-xii:42253).

PRESENTATION TYPE: poster

TOPIC: Infrared and THz Detectors.

July 10, 2014  

RF patent office issued a patent ¹ 2521156 (author - Matveev B.A.) on construction of the front surface illuminated photodiode (priority date - 05.10.2011).

June 12, 2014  

Journal "Fizika i Tekhnika Poluprovodnikov" has published electronic preliminary version of the paper .

May 12, 2014

 

Matveev Boris will present report "InAs and InAsSb single heterostructure photodiodes" at  the 23-d Conference on night vision and optoelectronics on 30 May 2014 in Moscow.

April 1, 2014

 

Dual band detectors for pyrometry and gas analysis have been introduced into the production list..

March 24, 2014

 

2x2 or 3x3 matrixes with individually addressable PD elements with common cathode are now available.

February 21, 2014  

Infrared Physics and Technology journal has published preliminary electronic version of the paper on "Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes".

January 28, 2014

 

Boris Matveev presented report on  "Mid-IR diodes for applications in pyrometry and gas sensing" at the Datis/ENPI seminar in Aalto University (Espoo, Finland).

January 20, 2014  

Maxim Remennyy will present IoffeLED at 9th Edition of the International Specialized Exhibition for Laser, Optical and Optoelectronic Technologies – PHOTONICS. WORLD OF LASERS AND OPTICS'2014 (Moscow, March 25 – 27, 2014).

    2013
December 19, 2013   A.Yu. Rybal’chenko presented his PhD thesis on "Front Surface Illuminated InAsSb(P) Photodiodes” to scientific council # Ä 212.229.01.
November 28, 2013  

IoffeLED, Ltd. has reserved an exhibition stand space # 11- 212 at the SENSOR+TEST 2014 to take place on 3.-6.06.2014 at the Exhibition Centre Nürnberg, Germany. Both B.Matveev and M.Remennyy plan to present IoffeLED products including mid-IR LEDs with wall plug efficiency exceeds unity.

August 15, 2013

 

IoffeLED, Ltd. was awarded a grant within the state funded program for developing high-tech products for international market. For nearly two years from now IoffeLED, Ltd. will concentrate it's efforts on design and development of mid-IR LED/PD based sensors for gas analysis and low temperature pyrometry. IoffeLED, Ltd. will be happy to receive specifications for IR sensors from potential customers - our specialists will do their best to answer all your questions and satisfy your specific sensing needs.

May 24,  2013

 

Boris Matveev will present report # 0211 (section 12) on “Cooled p-InAsSbP/n-InAs single heterostructure photodiodes” at the XI-th Russian conference on Physics of Semiconductors (St.Petersburg, September 16-20, 2013).

http://www.ioffe.ru/semicond2013/

March 25 – 27, 2013

 

Maxim Remennyy participated and presented MIRDOG products at the 8th Edition of the International Specialized Exhibition for Laser, Optical and Optoelectronic Technologies – PHOTONICS. WORLD OF LASERS AND OPTICS'2013, Moscow, March 25 – 27, 2013

   

2012

30 November 2012  

New PDs with peak wavelength at 2.7  μm are now available  (with TO-18 and screw cases).

14 September 2012

 

Maxim Remennyy will present Ioffe Institute and MIRDOG devices at the Nanotechnology International Forum “RUSNANOTECH 2012” as a part of Moscow International Forum for Innovative Development “Open Innovations” from October 31 to November 2 at Expocentre Fairgrounds, Moscow.

23 August 2012  

Boris Matveev will present report on "Photocurrent crowding in InAsSbP based front surface illuminated photodiodes" (B. A. Matveev, N. D. Il’inskaya, S. A. Karandashev, M. A. Remennyi, N.M. Stus’) at the 11th international conference on Infrared Optoelectronics: Materials and Devices (MIOMD-XI) September 4th -8th, 2012 (Chicago, IL, USA).

25 May 2012

Sergey  Karandashev will repot on "Front surface illuminated InAsSb PDs (λ0.1 = 4.5 μm) for operation at 25-80 ºÑ" at the 22-nd Conference on night vision and optoelectronics, 22-25 May 2012, Moscow.

22-24 May 2012

IoffeLED will participate at the Sensor and Test 2012 in Nürnberg/Nuremberg, Germany.

(Booth #282-12).

21 May 2012

 

Boris Matveev will present the following oral report at the IMCS 2012 - The 14th International Meeting on Chemical Sensors May 20 - 23, 2012, Nürnberg/Nuremberg, Germany : «Microimmersion lens LEDs for portable photoacoustic methane sensors».

2 March, 2012

 

Parthiban Santhanam, et al. “Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency.” Phys. Rev. Lett. 108, 097403 (2012). DOI: 10.1103/PhysRevLett.108.097403

Read more at: http://phys.org/news/2012-03-efficiency.html#jCp

Parthiban Santhanam, et al. “Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency.” Phys. Rev. Lett. 108, 097403 (2012). DOI: 10.1103/PhysRevLett.108.097403

Read more at: http://phys.org/news/2012-03-efficiency.html#jCp

Parthiban Santhanam, et al. “Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency.” Phys. Rev. Lett. 108, 097403 (2012). DOI: 10.1103/PhysRevLett.108.097403

Read more at: http://phys.org/news/2012-03-efficiency.html#jCp

Parthiban Santhanam, et al. “Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency.” Phys. Rev. Lett. 108, 097403 (2012). DOI: 10.1103/PhysRevLett.108.097403

Read more at: http://phys.org/news/2012-03-efficiency.html#jCp

Parthiban Santhanam, et al. ( see “Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency.” Phys. Rev. Lett. 108, 097403 (2012). DOI: 10.1103/PhysRevLett.108.097403) demonstrated  230% wall-plug efficiency in immersion lens LED emitting at 2.1 um (part number LED21Sr).
Read more in English and in Russian as well as internet comments.

    2011

22-26 August, 2011

 

Boris Matveev together with M.Sharkov, P.Kop'ev, I.Andreev, I.Tarasov and K.Mynbaev participated at All Russian conference on photoelectronics in Novosibirsk.

   

2010

May 28, 2010 Maxim Remennyy will present oral report “Infrared InAs detectors with several barriers” at the 21-st Conference on night vision and optoelectronics, 25-28 May 2010,  Moscow.
25-28 January 2010

 

Boris Matveev will present two oral reports at the Photonics West 2010, San-Francisco, USA: «Properties of n-InAsSbP/n-InAs interface» and “InGaAsSb LED arrays ( λ = 3.7 um) with photonic crystals”.

2009

30 November 2009
 
Ph.D. student Chaus M.V. will present report on “p-InAsSbP/n-InAs LEDs at high pumping conditions” at the 9-th conference on semiconductors and nano-optoelectronics for young scientists (30 Nov.- 4 Dec. 2009, St Petersburg Academic University — Nanotechnology Research and Education Centre).
20 November 2009
 
MIRDOG team work on IR LEDs and PDs was nominated as one of the best works of Ioffe Institute in 2009. Ioffe Institute, November 2009.
27 August 2009
 
S. A. Karandashev will present a poster on “Mid-IR LED arrays with Photonic Crystals” at the The Second Nanotechnology International Forum  October 6 – 8, 2009, Moscow, Central Exhibition Complex “Expocentre” .
27 August 2009
 
Boris Matveev has scheduled a report on "Mid-IR LEDs, hollow waveguide devices and Si cantilever devices for hybrid integrated photoacoustic gas sensor" at the  4th concertation meeting on "Photonics-Enabled Applications" 10-11 September 2009, Athens - Greece.
2008
11 November  2008
 
MIRDOG has delivered first LED samples to MINIGAS consortium for testing in miniaturised photoacoustic gas sensor based on patented interferometric readout and novel photonic integration technologies.
11 November  2008
 
Boris Matveev will present a poster report on Midinfrared diode arrays and LEDs based on In(Ga)As(Sb) with Photonic Crystals at the Nanotechnology International Forum  in Moscow 3-5 December 2008.
27 October  2008
 
G. Sotnikova will present poster report A4P-G3 "MODELING OF PERFORMANCE OF MID-INFRARED GAS SENSORS BASED ON IMMERSION LENS DIODE OPTOPAIRS" (G. Sotnikova, S. Aleksandrov, G. Gavrilov, A. Kapralov, B. Matveev, M. Remennyi, and K. Sotnikov)" at the IEEE SENSORS 2008 Section "Optical Sensors II" LECCE, ITALY.
8 September 2008
 
B. A. Matveev will make an oral presentation of the report "InAs(Sb) backside illuminated photodiodes and LEDs with deep mesa" at  9 th International Conference on Mid-Infrared Optoelectronics: Materials and Devices  (MIOMD-IX, 7 th - 11 th September 2008, Freiburg, Germany ).
3 May 2008
 
Boris Matveev has scheduled an oral report on “Broad band InAsSb backside illuminated photodiodes with a cut-off wavelength of 4.5 um” at the 20-th International technological conference on photoelectronics and night vision devices (30 May , 11.45 a.m., Moscow, Russia).
2007
29 October 2007
 
Scientific work “Invention and utilization of negative luminescence effect in semiconductor devices” by V.I.Ivanov-Omskii, V.I.Smirnov, B.A.Matveev and N.M.Stus’ was nominated for Ya.I. Frenkel premium 2007 founded by Ioffe Institute Scientific Council.
21 June 2007
 
 Ms. Usikova A.A. will present poster report on “Optically pumped LEDs (l=3.3 um) based on InAs photonic crystals” at the VIII Russian conference on physics of semiconductors “Semiconductors -2007”, Yekaterinburg,  30.09.2007-5.10.2007.
8 June 2007
 
Minister of Science and Education of RF Andrey Fursenko has awarded the winner of the Sixth “Russian innovations” competition Maxim Remennyi with a prize established by journal “Expert”.
30 April 2007
 
Project “Optical gas analyzers and pyrometry control units based on immersion Mid-IR (3 -5.5 um) diode optopairs” (Author – Sotnikova G.Yu.)  has been included for funding within the RAS program for innovation support.
28 April 2007  
IoffeLED, Ltd. was awarded by a silver medal for presentation its project “Immersion lens LEDs and photodiodes for the mid-IR (3-5 um) spectral range” at the VII Moscow Innovation International Salon of Innovation and Investments.
IoffeLED, Ltd. was awarded by a diploma for presentation its project “Chemical sensors based on infrared (3-5 um) immersion lens LEDs and photodiodes” at the 10-th International Venturing seminar “Russian Technologies for Industry. Nanotechnologies and optoelectronics in life sciences”, St.Petersburg, 1-3 November 2006 .
30 March 2007
 
Matveev Boris will present two reports on “GaInAsSb/GaSb (1.8-2.3 um) immersion lens photodiodes” (oral) and “Progress in InAs Infrared Photodiodes” (poster) at the 8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD -VII)  which will take place from May 14-16, 2007 in Bad Ischl in Austria.
30 March 2007
 
Maksim Remennyy will present two reports on "InAs and InAs(Sb)(P) (3-5 um) immersion lens photodiodes for portable optic sensors " (oral paper 6585-03)  and "Performance of InAs-based Infrared Photodiodes" ( poster paper 6585-77) at the SPIE International Congress on Optics and Optoelectronics (Optical Sensors) held in Prague, April 16-20, 2007.  Prague Congress Centre , Prague, Czech Republic.

2006

27 October 2006  
Maksim Remennyy will present report on "Chemical sensors on the base of mid-IR (3-5 um) immersion LEDs and photodiodes" at the 10th INTERNATIONAL VENTURING SEMINAR RUSSIAN TECHNOLOGIES FOR INDUSTRY: Nanotechnologies and optoelectronics in life sciences. Saint-Petersburg, 1-3 November 2006.
21 July 2006
 
S.A. Karandashev will present an oral report on "InAs based immersion lens photodiodes operating at room temperature" at 6-th  Conference on GaAs and III-V compounds ( 3-5 October, 2006, Tomsk, Russia).
31 March 2006
 
B.Matveev will present project “InfraRed LED’s” at the Ohio-Eurasia Innovation and Investment Forum, 6-8 June 2006 in Cleveland, Ohio. This Forum was organized in partnership with the Ohio Department of Development (ODOD), 5iTech, LLC,  the Russian Foundation for Assistance for Small Innovative Enterprises (FASIE)  and TECHINVEST.
24 March 2006  
Maxim Remennyi  project  06-2-Í4.2-0201 "Immersion flip-chip photodiodes for the 3-5 um spectral range" has been supported by The Foundation for Assistance to Small Innovative Enterprises (FASIE) within the state program START-2006.
2005
19 December 2005
 
New product - photodiode amplifier - has been launched. We are thus expecting increase of photodiode orders due to existence of quite friendly interface between low resistance photodiode ( from InAs, InAsSb etc.) and conventional laboratory equipment.
6 December 2005
 
A. Koriuk has made oral presentation of the report "GaInAsSb backside illuminated photodiodes operating in the 1.9-2.2 um spectral range at 20-140 oC" at the "VII-Russian young scientists conference on semiconductor optoelectronics and nanoelectronics" (5-9 December 2005, St.Petersburg).
28 November 2005
 
Matveev B. has presented oral report at the MRS Fall Meeting 2005 3.3-4.3 um high brightness LEDs".
10 November 2005  
Maxim Remennyi research project "Mid-IR (3-5 um) Negative and Positive Luminescence Sources from InAs Based Solid Solution with microstructured surface" (¹ ÌÊ-1804.2005.02) was nominated for funding within the Russian President program for support young scientists and leading scientific schools.
29 June 2005
 
S.A.Aleksandrov has scheduled a report on “Portable gas analyzers based on immersion lens Mid-IR diode optopairs: model, construction and testing” at the VIII International Conference For Young Researchers "Wave Electronics and its Applications in the Information and Telecommunication Systems" St.Petersburg, Russia. 4-9 September 2005.
27 June 2005
 
Matveev B. has scheduled two oral reports at the MIOMD-VII Conference: Mid-IR deep mesa LEDs " and "Single channel gas analyzers based on immersion lens Mid-IR diode optopairs ".
29 May 2005
 
57.0347 US PCT (“Radiation source”, B. Matveev et al. ) is granted as patent US 6 876 006  with grant date 5 April 2005.
20 May 2005  
B.Matveev project # 05-2-Í4-0159 was supported by The Foundation for Assistance to Small Innovative Enterprises (FASIE) set up by Russian government resolution No. 65 of February 3, 1994 within the innovation program START-2005.   Small Innovative enterprise goal is to develop and market Optically Pumped mid-IR LEDs (US patent #6 876 006 with grant date 5 April 2005, GB patent #2363906 with grant date 22 October 2003).
5 May 2005
 
V.V. Tetyorkin has scheduled an oral report on "p-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors" (V.V. Tetyorkin, A.V. Sukach, S.V. Stariy, Institute of Semiconductor Physics, Ukraine; B.A. Matveev, N.V. Zotova, S.A. Karandashev, M.A. Remennyi, N.M. Stus, Ioffe Physico-Technical Institute, Russia) # [5957-35] on 30 August 2005 at the SPIE conference on Optics and Optoelectronics in Warsaw (Poland).
28 April 2005
 
Dr. B. Matveev decided to expose letters written by his relatives during the Leningrad siege (Blokada) in 1942 as a contribution to the celebration of the 60 anniversary of the War II ending.
2004
23 December 2004  
G.Sotnikova has scheduled a report on Portable Gas Analyzer Based on mid-IR Diode Optopairs” at the SPIE – RUS conference on “Lasers for medicine, biology and ecological monitoring -2005”( 19-20 January 2005, St.Petersburg) .
6 December 2004  
Uelin V.V. has scheduled a poster report (P12) on “InAs epitaxial layers for resonant cavity LEDs” at the “VI-Russian young scientists conference on semiconductor optoelectronics and nanoelectronics” (6-10 December 2004, St.Petersburg).
19 October 2004  
B.A. Matveev has scheduled an oral report "New generation of optically active diodes in photometry and optics" at the III International Optical Congress «Optics - XXI century» (18-22 October 2004, St.Petersburg).
14 July 2004  
First InAs epilayer has been successfully grown by the MOCVD process using AIX 200 system (for the details visit AIXTRON press release dated 19 November 2003.
2 June 2004  
Maxim Remennyi research project “Vertically emitting InAs/InAsSbP DH LEDs and lasers for the 3-4 um spectral range” was nominated for funding within the St.Petersburg program for support young scientists (grant ¹ PD04-1.2-259.
18 May 2004  
Sukach A.V. has scheduled an oral report on p-InAsSbP/n-InAs photodiodes at the 18-th International technological conference on photoelectronics and night vision devices ( May 25-28, 2004, Moscow, Russia) .
28 April 2004  
B.A. Matveev has scheduled an oral report on the Vertically emitting InAs LEDs and lasers with mirror anode and  InAs and InAsSbP Flip-chip LEDs for Fiber Optic Liquid Sensing in the 3-3.3 um spectral range" as poster report at the 6th International Conference "Mid-Infrared Optoelectronics Materials and Devices (MIOMD-VI)" (June 28 - July 02 2004, St.Petersburg).
28 April 2004  
V. Malyutenko has scheduled an oral report on the "InAs(Sb) LEDs and negative luminescent devices for dynamic scene simulation in the first atmospheric window (3-5 um)" as oral report at the 6th International Conference "Mid-Infrared Optoelectronics Materials and Devices (MIOMD-VI)" (June 28 - July 02 2004, St.Petersburg).
19 April 2004  
S.A. Karandashev has scheduled a poster report on the “Vertically emitting InAs LEDs and lasers with cavity formed by gold anode and semiconductor/air interface” at the 4th International conference on physics of  light-matter coupling in nanostructures (June 29 - July 3, 2004 St. Petersburg, RUSSIA).
19 April 2004
 
MIRDOG has introduced new product – diode optopair tester for the first time users (description in Russian (600K)).
    2003
3 October 2003  
S.A Karandashev will present the following report at the 6-th Russian Semiconductor Physics Conference: “Negative Luminescence in narrow gap A3B5 heterostructures”.
12 August 2003   Ioffe Institute has started preparations for celebration of 100-years from birth of Prof.D.N.Nasledov - founder of Laboratory of Electronics Semiconductors-pioneer in fabrication and investigation of narrow gap A3B3 compounds.
28 April 2003  
A.R.T. Photonics (Germany) and MIRDOG have launched new joint product – FIBER DIODES – LEDs and detectors coupled with fibers.
27 April 2003  
Dr. Matveev has scheduled a report on “Flip-chip” mid-IR LEDs for fibre optic chemical sensing at the poster session of the "Northern Optics 2003" conference : 16-18 June 2003 , Espoo (Finland).
25 April 2003  
Maxim Remennyi research project «Mid-IR (3-5 um) Negative Luminescent A3B5 Based Devices with Built-in Cavities» (¹ ÌÊ-1597.2003.02) was nominated for funding within the Russian President program for support young scientists and leading scientific schools.
8 April 2003  
B. Matveev, V. Vaynshteyn and M. Remennyi have applied for RF patent on “Method for optical detection of gaseous components”, application  2003110480.
26 March 2003  
Dr.Remennyi has scheduled an oral report on InGaAsSb negative luminescent devices with built-in cavities emitting at 3.9 um at the "Narrow Gap Semiconductors -11" conference to be on 16-20 June 2003.
 
26 March 2003  
New MIRDOG service: 2D infrared mapping of the “flip chip” LEDs on a special order.
 
January-March 2003  

The following papers have been accepted for publication:

B.A. Matveev, M. Aydaraliev, N.V. Zotova, S.A. Karandashov, N.D. Il’inskaya, M.A. Remennyi, N.M. Stus' and G.N. Talalakin, "Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3 um spectral region" in IEE Optoelectronics.
M.A. Remennyi, N.V. Zotova, S.A. Karandashev, B.A. Matveev, N.M. Stus’, G.N.Talalakin, "Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 um spectral range" in Sensors & Actuators B: Chemical
M.Aidaraliev, N. V. Zotova, N .D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’ and G. N. Talalakin, "InAs and InAsSb LEDs with built-in cavities" in Semiconductor Science & Technology..

 

 

2002

10 September 2002  
Dr. Matveev presented invited report "In(Ga)As- and InAs(Sb)-Based Heterostructure LEDs and Detectors for the 3-5 um Spectral Range" at the MIOMD-V conference in Annapolis (USA).
16 July 2002  
 Dr. Matveev filed a patent on “Radiation Source” to Russian Federation Patent Office (application number : # 2002119616 from 16/07/2002) that cover construction of the immersion lens LEDs and “resonant cavity” LEDs presented in the MIOMD-V report and abstract.
 
7-10 July 2002  
Dr. Remennyi presented report "Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 um spectral range" at “9th International Meeting on Chemical Sensors” carried out in Boston, USA.

 

 

 

 

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