- 30 November 2009
|
-
|
- Chaus M.V. will present
report on “p-InAsSbP/n-InAs LEDs at high pumping conditions” at
the 9-th conference on semiconductors and nano-optoelectronics for young
scientists (30 Nov.- 4 Dec. 2009, St Petersburg Academic University —
Nanotechnology Research and Education Centre).
-
|
- 20 November 2009
|
-
|
- MIRDOG team work on IR LEDs
and PDs was nominated as one of the
best works of
Ioffe Institute in 2009. Ioffe Institute, November
2009.
-
|
- 27 August 2009
|
-
|
- S. A. Karandashev will
present a poster on “Mid-IR LED arrays with Photonic Crystals” at
the
The Second
Nanotechnology International Forum
October 6 – 8, 2009, Moscow, Central Exhibition Complex “Expocentre”
-
|
- 27 August 2009
|
-
|
- Boris Matveev has scheduled a report on "Mid-IR
LEDs, hollow waveguide devices and Si cantilever devices for hybrid
integrated photoacoustic gas sensor" at the 4th concertation
meeting on "Photonics-Enabled Applications" 10-11 September 2009, Athens
- Greece
-
|
- 11
November 2008
|
-
|
-
MIRDOG has delivered first LED samples to
MINIGAS
consortium for testing in miniaturised
photoacoustic gas sensor based on patented interferometric readout and
novel photonic integration technologies.
-
|
- 11
November 2008
|
-
|
- Boris Matveev will
present a poster report on “Midinfrared diode
arrays and LEDs based on In(Ga)As(Sb) with Photonic Crystals” at
the
Nanotechnology
International Forum in Moscow 3-5 December 2008
-
|
- 27 October 2008
|
-
|
- G. Sotnikova will present poster report A4P-G3
"MODELING OF PERFORMANCE OF MID-INFRARED GAS SENSORS BASED ON
IMMERSION LENS DIODE OPTOPAIRS" (G. Sotnikova, S. Aleksandrov, G.
Gavrilov, A. Kapralov, B. Matveev, M. Remennyi, and K. Sotnikov)" at the
IEEE SENSORS
2008 Section "Optical Sensors II" LECCE, ITALY
-
|
- 8 September 2008
|
-
|
- B. A. Matveev
will make an oral presentation of the report "InAs(Sb) backside
illuminated photodiodes and LEDs with deep mesa" at
9 th
International Conference on
Mid-Infrared Optoelectronics:
Materials and Devices
(MIOMD-IX,
7 th - 11
th September 2008, Freiburg, Germany )
-
|
- 3 May 2008
|
-
|
- Boris
Matveev has scheduled an oral report on “Broad band InAsSb backside
illuminated photodiodes with a cut-off wavelength of 4.5 um” at the
20-th International
technological conference on photoelectronics and night vision devices
(30 May , 11.45 a.m., Moscow, Russia)
-
|
- 29
October 2007
|
-
|
-
Scientific work “Invention and utilization
of negative luminescence effect in semiconductor devices” by
V.I.Ivanov-Omskii, V.I.Smirnov, B.A.Matveev and N.M.Stus’ was nominated
for
Ya.I. Frenkel
premium 2007 founded by
Ioffe
Institute Scientific Council
-
|
- 21 June 2007
|
-
|
- Ms.
Usikova A.A. will present poster report on “Optically pumped LEDs (l=3.3
um) based on InAs photonic crystals” at the
VIII Russian
conference on physics of semiconductors
“Semiconductors -2007”,
Yekaterinburg,
30.09.2007-5.10.2007
-
|
- 8 June 2007
|
-
|
- Minister of Science
and Education of RF Andrey Fursenko has awarded the winner of the
Sixth
“Russian innovations” competition
Maxim Remennyi with a prize established by journal “Expert”.
-
|
- 30 April 2007
|
-
|
- Project “Optical gas
analyzers and pyrometry control units based on immersion Mid-IR (3 -5.5
mm) diode
optopairs” (Author – Sotnikova G.Yu.) has been included for funding
within the RAS program for innovation support.
-
|
|
28 April 2007 |
|
-
Ioffe LED, Ltd. was awarded
by a silver medal for presentation its project “Immersion lens LEDs and
photodiodes for the mid-IR (3-5 mm)
spectral range” at the
VII Moscow Innovation International
Salon of Innovation and Investments.
-
- Ioffe LED, Ltd. was awarded by
a diploma for presentation its project “Chemical sensors based on
infrared (3-5 mm)
immersion lens LEDs and photodiodes” at the
10-th International Venturing
seminar “Russian Technologies for Industry. Nanotechnologies and
optoelectronics in life sciences”, St.Petersburg, 1-3
November 2006 .
-
|
- 30 March 2007
|
-
|
- Matveev Boris will
present two reports on
“GaInAsSb/GaSb
(1.8-2.3 um) immersion lens photodiodes” (oral)
and “Progress in InAs Infrared Photodiodes” (poster) at the 8th
International Conference on Mid-Infrared Optoelectronics:
Materials and Devices (MIOMD-VIII)
which will take place from May 14-16,
2007 in Bad Ischl in
Austria.
-
|
- 30 March 2007
|
-
|
- Maksim Remennyy
will present two reports on "InAs and InAs(Sb)(P) (3-5 um) immersion
lens photodiodes for portable optic sensors
" (oral paper 6585-03) and
"Performance of InAs-based Infrared Photodiodes"
( poster paper 6585-77) at the
SPIE
International Congress on Optics and Optoelectronics (Optical Sensors)
held in
Prague,
April 16-20, 2007. Prague Congress
Centre
, Prague,
Czech Republic
-
|
| 27 October
2006 |
|
- Maksim Remennyy will present report on
"Chemical sensors on the base of mid-IR (3-5 µm) immersion LEDs and
photodiodes" at the
10th
INTERNATIONAL VENTURING SEMINAR RUSSIAN TECHNOLOGIES FOR INDUSTRY:
Nanotechnologies and optoelectronics in life sciences. Saint-Petersburg,
1-3 November 2006
-
|
- 21 July 2006
|
-
|
- S.A. Karandashov will present an oral report on
"InAs based
immersion lens photodiodes operating at room temperature"
at
6-th
Conference on GaAs and III-V compounds ( 3-5 October,
2006, Tomsk, Russia).
-
|
-
31 March 2006
|
-
|
-
|
| 24 March 2006 |
|
- Maxim Remennyi project 06-2-Í4.2-0201
"Immersion flip-chip
photodiodes for the 3-5 mm spectral range"
has been supported by
The Foundation
for Assistance to Small Innovative Enterprises (FASIE)
within the state program START-2006.
-
|
- 19 December 2005
|
-
|
- New product -
photodiode
amplifier - has been launched. We are thus expecting
increase of photodiode orders due to existence of quite friendly
interface between low resistance photodiode ( from InAs, InAsSb etc.)
and conventional laboratory equipment.
-
|
- 6 December 2005
|
-
|
- A. Koriuk has made oral presentation of the report
"GaInAsSb
backside illuminated photodiodes operating in the 1.9-2.2 mm spectral range at 20-140 oC" at
the
"VII-Russian
young scientists conference on semiconductor optoelectronics and
nanoelectronics" (5-9 December 2005, St.Petersburg)
-
|
- 28 November 2005
|
|
- Matveev B. has presented oral report at the
MRS Fall
Meeting 2005
“3.3-4.3
mm high brightness LEDs"
-
|
| 10
November 2005 |
|
- Maxim Remennyi research project
"Mid-IR (3-5 mm)
Negative and
Positive Luminescence Sources from InAs Based Solid Solution with microstructured
surface" (¹
ÌÊ-1804.2005.02) was nominated for funding within the
Russian President program for support
young scientists and leading scientific schools.
-
|
- 29 June 2005
|
-
|
-
S.A.Aleksandrov has scheduled a report on
“Portable gas analyzers based on immersion lens
Mid-IR diode optopairs: model, construction and testing”
at the
VIII
International Conference For Young Researchers
"Wave
Electronics and its Applications in the Information and
Telecommunication Systems"
St.Petersburg, Russia. 4-9 September 2005
-
|
- 27 June 2005
|
|
- Matveev B. has scheduled two oral reports at the
MIOMD-VII Conference:
“Mid-IR deep mesa LEDs " and
"Single channel
gas analyzers based on immersion lens Mid-IR diode optopairs "
-
|
- 22 June 2005
|
-
|
- According to
Prof. Malyutenko “the mankind is divided into two major parts: those who
understand negative luminescence phenomena and those who do not”. We
decided to establish the
Negative Luminescence Association
to make this division clear.
-
|
- 29 May 2005
|
-
|
- 57.0347 US PCT
(“Radiation source”, B. Matveev et al. ) is granted as patent US 6
876 006 with grant date 5 April 2005.
-
|
| 20 May 2005 |
|
- B.Matveev
project #
05-2-Í4-0159
was
supported by The Foundation for Assistance to Small Innovative
Enterprises (FASIE) set up by Russian government resolution No. 65 of
February 3, 1994 within the innovation program
START-2005.
Small Innovative Enterprise goal is to develop and market Optically
Pumped mid-IR LEDs (US patent #6 876 006 with grant date 5 April 2005,
GB patent #2363906 with grant date 22 October 2003)
-
|
- 5 May 2005
|
-
|
- V.V.
Tetyorkin has scheduled an oral report on "p-InAsSbP/n-InAs photodiodes
for IR optoelectronic sensors" (V.V. Tetyorkin, A.V.
Sukach, S.V. Stariy, Institute of Semiconductor Physics, Ukraine; B.A.
Matveev, N.V. Zotova, S.A. Karandashev, M.A. Remennyi, N.M. Stus, Ioffe
Physico-Technical Institute, Russia) # [5957-35]
on 30 August
2005 at the SPIE conference on Optics and Optoelectronics in Warsaw
(Poland).
-
|
| 28 April 2005 |
-
|
-
Dr. B. Matveev decided to expose
letters
written by his relatives during the Leningrad siege (Blokada)
in 1942 as a contribution to the celebration of the 60 anniversary of the
War II ending.
-
|
| 23 December 2004 |
|
- G.Sotnikova has scheduled a report on “Portable Gas Analyzer Based
on mid-IR Diode Optopairs” at the
SPIE – RUS conference on “Lasers for medicine,
biology and ecological monitoring -2005”( 19-20 January 2005,
St.Petersburg)
-
|
| 6 December 2004 |
|
- Uelin V.V. has scheduled a poster report (P12) on “InAs epitaxial
layers for resonant cavity LEDs” at the
“VI-Russian young scientists conference on
semiconductor optoelectronics and nanoelectronics” (6-10
December 2004, St.Petersburg)
-
|
| 19 October 2004 |
|
- B.A. Matveev has scheduled an oral report
"New generation of optically active diodes in
photometry and optics" at the
III
International Optical Congress «Optics
- XXI century»
(18-22 October 2004, St.Petersburg)
-
|
| 14 July 2004 |
|
- First InAs epilayer has been successfully grown
by the
MOCVD process using AIX 200 system
(for the details visit
AIXTRON press release dated 19 November 2003)
-
|
| 2 June 2004 |
|
- Maxim Remennyi research project “Vertically emitting InAs/InAsSbP
DH LEDs and lasers for the 3-4 mm spectral range”
was nominated for funding within the
St.Petersburg program for support young scientists (grant ¹ PD04-1.2-259)
|
| 18 May 2004 |
|
- Sukach A.V. has scheduled an oral report on p-InAsSbP/n-InAs
photodiodes at the
18-th International technological conference on
photoelectronics and night vision devices ( May 25-28,
2004, Moscow, Russia)
|
| 28 April 2004 |
|
- B.A. Matveev has scheduled an oral report on the “Vertically
emitting InAs LEDs and lasers with mirror anode” and
“InAs
and InAsSbP Flip-chip LEDs for Fiber Optic Liquid Sensing in the 3-3.3 µm
spectral range"
as poster report at the 6th
International Conference
"Mid-Infrared Optoelectronics Materials and Devices
(MIOMD-VI)" (June 28 - July 02 2004, St.Petersburg)
-
|
| 28 April 2004 |
|
-
V. Malyutenko
has scheduled an oral report on the "InAs(Sb)
LEDs and negative luminescent devices for dynamic scene simulation in the
first atmospheric window (3-5 mm)" as oral report
at the 6th
International Conference
"Mid-Infrared Optoelectronics Materials and Devices
(MIOMD-VI)" (June 28 - July 02 2004, St.Petersburg)
|
| 19 April 2004 |
|
- S.A. Karandashev has scheduled a poster report on the “Vertically
emitting InAs LEDs and lasers with cavity formed by gold anode and
semiconductor/air interface” at the
4th International conference on physics
of light-matter coupling in nanostructures
(June 29 - July 3, 2004 St. Petersburg, RUSSIA)
-
|
- 19 April 2004
|
|
- MIRDOG has introduced new product – diode optopair tester for the
first time users (description
in Russian (600K))
-
|
| 3 October 2003 |
|
-
S.A Karandashev will present the following
report at the 6-th Russian Semiconductor Physics Conference:“Negative
Luminescence in narrow gap A3B5 heterostructures”
-
|
| 28 April 2003 |
|
- A.R.T. Photonics (Germany) and MIRDOG have launched new joint product
– FIBER DIODES – LEDs and detectors coupled with fibers.
-
|
| 27 April 2003 |
|
- Dr. Matveev has scheduled a report on “Flip-chip” mid-IR LEDs for
fibre optic chemical sensing at the poster session of the “Northern
Optics 2003” conference : 16-18 June 2003 , Espoo (Finland).
-
|
| 25 April 2003 |
|
- Maxim Remennyi research project «Mid-IR (3-5 mm)
Negative Luminescent A3B5 Based Devices with Built-in Cavities» (¹
ÌÊ-1597.2003.02) was nominated for funding within the
Russian President program for support
young scientists and leading scientific schools.
-
|
| 8 April 2003 |
|
- B. Matveev, V. Vaynshteyn and M. Remennyi have applied for RF patent
on “Method for optical detection of gaseous components”, application
2003110480.
-
|
| 26 March 2003 |
|
- Dr.Remennyi has scheduled an oral report on “InGaAsSb negative
luminescent devices with built-in cavities emitting at 3.9
mm” at the
NGS-11 conference to be on 16-20 June
2003
-
|
| 26 March 2003 |
|
- New MIRDOG service:
2D infrared mapping
of the “flip chip” LEDs on a special order
-
|
| January-March 2003 |
|
The following papers have been accepted for
publication:
- B.A. Matveev, M. Aydaraliev, N.V. Zotova, S.A. Karandashov, N.D.
Il’inskaya, M.A. Remennyi, N.M. Stus' and G.N. Talalakin,
"Flip-chip
bonded InAsSbP and InGaAs LEDs and detectors for the 3 mm spectral region" in IEE
Optoelectronics
|
| 10 September 2002 |
|
- Dr. Matveev presented invited report "In(Ga)As- and InAs(Sb)-Based
Heterostructure LEDs and Detectors for the 3-5
mm Spectral Range" at the MIOMD-V conference in Annapolis (USA)
-
|
| 16 July 2002 |
|
- Dr. Matveev filed a patent on “Radiation Source” to Russian
Federation Patent Office (application number : # 2002119616 from
16/07/2002) that cover construction of the immersion lens LEDs and
“resonant cavity” LEDs presented in the MIOMD-V report and abstract.
-
|
| 7-10 July
2002 |
|
- Dr. Remennyi presented report "Low voltage episide down bonded mid-IR
diode optopairs for gas sensing in the 3.3-4.3
mm spectral range" at “9th
International Meeting on Chemical Sensors” carried out in Boston, USA
|
