Dates

                                       Events                                                                                           Specifications upgrading

M.E. Levinshtein has published a paper "Low frequency noise and resistance in non-passivated InAsSbP/InAs based photodiodes in the presence of atmosphere with ethanol vapor"
DOI: 10.61011/TPL.2023.06.56371.19524

Technical Physics Letters (ioffe.ru)

A.L. Zakgeim has published a paper "On heating mechanisms in LEDs based on p-InAsSbP/n-InAs(Sb)"
DOI: 10.21883/SC.2023.01.55619.4338

https://doi.org/10.21883/SC.2023.01.55619.4338

 June 22, 2023

Lukhmyrina,TS has published a paper on "Temperature distribution in InAsSbP/InAsSb/InAs double heterostructure on-chip sensors"

St. Petersburg. State. Polytech. Univ. J. Phys. Math., v.16, 1.1, 2023, p. 119 - 125
International Conference PhysicA.SPb/2022; St. Petersburg, Russia; 17-21 October 2022
https://doi.org/10.18721/JPM.161.120

"Optics and Spectroscopy" has published a paper on "On-chip ATR sensor (λ = 3.4 μm)

based on InAsSbP/InAs double heterostructure for the determination of the ethanol

concentration in an aqueous solutions"

January 23, 2023

RF patent office issued a patent on “Chemical sensor” № 2788588 with priority date 24 February 2022, Author : B. A. Matveev

2022

August 2, 2022

Paper on "Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP

mid-IR light emitting diodes" has been accepted for publication in Infrared Physics and Technology.

Corresponding Author: Dr. Nina Diakonova,
Co-Authors: S A Karandashev; M E Levinshtein; B A Matveev; M A Remennyi

https://doi.org/10.1016/j.infrared.2022.104301

https://authors.elsevier.com/a/1fXRE4p3e82yk5

"Optica i Spectriskopiya" has published a paper on "On-chip ATR sensor (λ = 3.4 μm)

based on InAsSbP/InAs double heterostructure for the determination of the ethanol

concentration in an aqueous solutions" (in Russian).DOI: 10.21883/OS.2022.08.52909.3236-22 

Galina Sotnikova presented report on “Remote temperature measurement using

photodiodes based on InAs and InAsSb” at the XXVI INTERNATIONAL SCIENTIFIC

AND TECHNICAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION

DEVICES. MOSCOW May 25, 26, 27, 2022.

Maxim Remennyi presented 2 reports on " LWIR HOT InAsSb_0.4 photodiode

Lambda_0.5 =9.5 um (T=360 К)" and “HOT InAsSb photodiode Lambda_0.5 =6.3 um

(T=400 К)” at the XXVI INTERNATIONAL SCIENTIFIC AND TECHNICAL

CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES. MOSCOW

May 25, 26, 27, 2022.

V. I. Ivanov-Omskii, one of the inventors of negative luminescence (NL) phenomenon in

semiconductors, died at the age of 89. In 2010 V.I.Ivanov-Omskii recorded interview

which describes some details on the history of his invention.

Russian Text © The Author(s), 2021, published in Optika i Spektroskopiya, 2021, Vol. 129, No. 9, pp. 1193–1197.

2020

Klimov has published a paper on “Room temperature mid-IR two-color photodiodes with InAs and InAs0.9Sb0.1 absorbing layers”

Lukhmyrina has published a paper on "Morphology and redispersibility of silver nanoparticles prepared by chemical reduction"

Kunkov has published a paper on "Photoelectric properties of heterostructures based on InAsSbx solid solutions (0.3 ˂x ˂0.35)".

The paper on "Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: photovoltaic mode and forward bias", by N. Dyakonova, S. Karandashev, M. Levinshtein, B. Matveev, M. Remennyi  is now on-line at the Infrared Physics & Technology (2020),  https://doi.org/10.1016/j.infrared.2020.103460

N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi,

have published a paper on  “Low frequency noise in reverse biased double heterostructure P-InAsSbP/ n-InAs infrared photodiodes”

in  Semicond. Sci. Technol. 35 (2020) 075010 (5pp) 

https://doi.org/10.1088/1361-6641/ab8756

The paper on “Direct Growth of Light-Emitting III–V Nanowires on Flexible Plastic Substrates” by Vladislav Khayrudinov,  Maxim Remennyi, Vidur Raj, Prokhor Alekseev,  Boris Matveev, Harri Lipsanen, and  Tuomas Haggren,  is now available on-line:

ACS Nano 2020, A-H, Publication Date: May 21, 2020

https://doi.org/10.1021/acsnano.0c03184

https://pubs.acs.org/action/showCitFormats?doi=10.1021/acsnano.0c03184&ref=pdf

B. A. Matveev, V. I. Ratushnyi, and A. Yu. Rybal’chenko have published a paper “Localization of Current Flow in Thermophotovoltaic Converters Based on InAsSbP/InAs Double Heterostructures”, Technical Physics, 2020, Vol. 65, No. 5, pp. 799–804

DOI: 10.1134/S1063784220050187

http://link.springer.com/article/10.1134/S1063784220050187

https://rdcu.be/b4y1G

2019

The report on “Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure” has been published in Journal of Physics Conference Series 1410:012028

DOI: 10.1088/1742-6596/1410/1/012028

The manuscript entitled “Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes” has been published in  Semiconductor Science and Technology 34(10):105015

DOI: 10.1088/1361-6641/ab3c3e

The manuscript entitled “Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides” has been published in

ISSN 1063-7842, Technical Physics, 2019, Vol. 64, No. 8, pp. 1164–1167. Russian Text published in Zhurnal Tekhnicheskoi Fiziki, 2019, Vol. 89, No. 8, pp. 1233–1237.

DOI: 10.1134/S1063784219080140

The manuscript entitled “Midinfrared Light-Emitting Diodes Based on А3В5 Heterostructures in Gas-Analyzer-Equipment Engineering:

Potential and Applications in 2014–2018” has been published in  Optics and Spectroscopy,

2019, Vol. 127, No. 2, pp. 322–327

DOI: 10.1134/S0030400X19080198

The manuscript entitled «InAs-Nanowire-Based Broadband Ultrafast Optical Switch» has been published in  J. Phys. Chem. Lett. 2019, 10, 15, 4429-4436

https://doi.org/10.1021/acs.jpclett.9b01626

The report on «Light-emitting InAs nanowires grown by MOVPE directly on flexible plastic substrates», May 2019, DOI: 10.1109/ICIPRM.2019.8819277 has been published in the Conference Proceedings: 2019 Compound Semiconductor Week (CSW).

DOI: 10.1109/ICIPRM.2019.8819277

The manuscript entitled “Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes” has been published in Semicond. Sci. Technol.34(2019)015013(5pp)  

DOI: 10.1088/1361-6641/aaf0c6

The review «Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)» has been published in Semiconductors, 2019, Vol. 53, No. 2, pp. 139–149

2018

Aleksandrov et al published a paper "InAsSb Diode Optical Pairs for Real-Time Carbon-Dioxide Sensors"

DOI: 10.1134/S1063784218090025

DOI: 10.21883/JTF.2018.09.46433.35-18 (Paper in Russian)

July, 2018

Maxim Remennyi will present 2 reports on "Low frequency noise in p-InAsSbP/n-InAs photodiodes" and on " P-InAsSbP/n-InAs/N-InAsSbP  broad band flip-chip DH photodiodes"

at the XXV INTERNATIONAL SCIENTIFIC AND TECHNICAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES. MOSCOW May 24, 25, 26 2018.

N. D. Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and A. A. Usikova have published  a paper “InAsSbP Photodiodes for 2.6–2.8-um Wavelengths” in Technical Physics, 2018, Vol. 63, No. 2, pp. 226–229.

DOI: 10.1134/S1063784218020172

The manuscript entitled "InAs0.7Sb0.3 bulk photodiodes operating at thermoelectric-cooler temperatures" (Original Paper, No. pssa.201700694R1) to Physica Status Solidi A: Applications and Materials Science
has been accepted for publication ( DOI: 10.1002/pssa.201700694 )

2017

RF patent office issued a patent № 2599905 (authors - Il`inskaya N.D., Matveev B.A., Remennyi M.A. and Usikova A.A.) on method  of producing mid-IR diodes (priority date - 11.05.2012).

April 07, 2016

Paper "Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes"

by P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, N.G.Karpukhina, A.A.Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus’, A.A. Usikova has been accepted for publication in Infrared Physics and Technology.

2015

Journal PHOTONICS (#3, 2015) has published the paper by B. Matveev "On the Question of terminology in the medium wave infrared optoelectronics"

Maxim Remennyy will present IoffeLED at the 10th Edition of the International Specialized Exhibition for Laser, Optical and Optoelectronic Technologies – PHOTONICS. WORLD OF LASERS AND OPTICS'2015

Moscow, March 16 – 19, 2015.

2014

 December 12, 2014

Journal Prikladnaya Fizika has published the paper on the 3x3 matrix based on p-InAsSbP/n-InAs single heterostructure diodes.

 December 4, 2014

Journal PHOTONICS has published the review dedicated to the research of capabilities of mid-IR (3–5μm) LEDs based on А3В5 heterostructures with respect to their use in optical gas analyzers.

 November 25, 2014

Boris Matveev presented short report on "Multispectral and multielement mid-IR LEDs and photodiodes for sensing applications" (10 min) at the seminar of the DATIS Project (Aalto University, Micronova, Espoo, Finland).

IoffeLED joined RF state program “Development of fabrication processes for semiconductor materials for use in matrix photodetectors and thermal vision", contract # 14.576.21.0057.

Abstract submitted to MIOMD-XII has been accepted for presentation at the conference.

ABSTRACT No. P-InAsSbP/n-InAs/n+-InAs photodiodes for operation at moderate cooling (150-220 K), B. Matveev [et al.] (sciencesconf.org:miomd-xii:42253).

PRESENTATION TYPE: poster

TOPIC: Infrared and THz Detectors.

RF patent office issued a patent № 2521156 (author - Matveev B.A.) on construction of the front surface illuminated photodiode (priority date - 05.10.2011).

Journal "Fizika i Tekhnika Poluprovodnikov" has published electronic preliminary version of the paper .

May 12, 2014

Matveev Boris will present report "InAs and InAsSb single heterostructure photodiodes" at  the 23-d Conference on night vision and optoelectronics on 30 May 2014 in Moscow.

April 1, 2014

Dual band detectors for pyrometry and gas analysis have been introduced into the production list..

March 24, 2014

2x2 or 3x3 matrixes with individually addressable PD elements with common cathode are now available.

Infrared Physics and Technology journal has published preliminary electronic version of the paper on "Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes".

January 28, 2014

Boris Matveev presented report on  "Mid-IR diodes for applications in pyrometry and gas sensing" at the Datis/ENPI seminar in Aalto University (Espoo, Finland).

Maxim Remennyy will present IoffeLED at 9th Edition of the International Specialized Exhibition for Laser, Optical and Optoelectronic Technologies – PHOTONICS. WORLD OF LASERS AND OPTICS'2014 (Moscow, March 25 – 27, 2014).

2013

IoffeLED, Ltd. has reserved an exhibition stand space # 11- 212 at the SENSOR+TEST 2014 to take place on 3.-6.06.2014 at the Exhibition Centre Nürnberg, Germany. Both B.Matveev and M.Remennyy plan to present IoffeLED products including mid-IR LEDs with wall plug efficiency exceeds unity.

August 15, 2013

IoffeLED, Ltd. was awarded a grant within the state funded program for developing high-tech products for international market. For nearly two years from now IoffeLED, Ltd. will concentrate it's efforts on design and development of mid-IR LED/PD based sensors for gas analysis and low temperature pyrometry. IoffeLED, Ltd. will be happy to receive specifications for IR sensors from potential customers - our specialists will do their best to answer all your questions and satisfy your specific sensing needs.

May 24,  2013

Boris Matveev will present report # 0211 (section 12) on “Cooled p-InAsSbP/n-InAs single heterostructure photodiodes” at the XI-th Russian conference on Physics of Semiconductors (St.Petersburg, September 16-20, 2013).

http://www.ioffe.ru/semicond2013/

March 25 – 27, 2013

Maxim Remennyy participated and presented MIRDOG products at the 8th Edition of the International Specialized Exhibition for Laser, Optical and Optoelectronic Technologies – PHOTONICS. WORLD OF LASERS AND OPTICS'2013, Moscow, March 25 – 27, 2013

2012

New PDs with peak wavelength at 2.7  μm are now available  (with TO-18 and screw cases).

14 September 2012

Maxim Remennyy will present Ioffe Institute and MIRDOG devices at the Nanotechnology International Forum “RUSNANOTECH 2012” as a part of Moscow International Forum for Innovative Development “Open Innovations” from October 31 to November 2 at Expocentre Fairgrounds, Moscow.

Boris Matveev will present report on "Photocurrent crowding in InAsSbP based front surface illuminated photodiodes" (B. A. Matveev, N. D. Il’inskaya, S. A. Karandashev, M. A. Remennyi, N.M. Stus’) at the 11th international conference on Infrared Optoelectronics: Materials and Devices (MIOMD-XI) September 4th -8th, 2012 (Chicago, IL, USA).

Sergey  Karandashev will repot on "Front surface illuminated InAsSb PDs (λ_0.1 = 4.5 μm) for operation at 25-80 ºС" at the 22-nd Conference on night vision and optoelectronics, 22-25 May 2012, Moscow.

IoffeLED will participate at the Sensor and Test 2012 in Nürnberg/Nuremberg, Germany.

(Booth #282-12).

21 May 2012

Boris Matveev will present the following oral report at the IMCS 2012 - The 14th International Meeting on Chemical Sensors May 20 - 23, 2012, Nürnberg/Nuremberg, Germany : «Microimmersion lens LEDs for portable photoacoustic methane sensors».

2 March, 2012

Parthiban Santhanam, et al. ( see “Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency.” Phys. Rev. Lett. 108, 097403 (2012). DOI: 10.1103/PhysRevLett.108.097403) demonstrated  230% wall-plug efficiency in immersion lens LED emitting at 2.1 um (part number LED21Sr).
Read more in English and in Russian as well as internet comments.

2011

22-26 August, 2011

Boris Matveev together with M.Sharkov, P.Kop'ev, I.Andreev, I.Tarasov and K.Mynbaev participated at All Russian conference on photoelectronics in Novosibirsk.

2010

25-28 January 2010

Boris Matveev will present two oral reports at the Photonics West 2010, San-Francisco, USA: «Properties of n-InAsSbP/n-InAs interface» and “InGaAsSb LED arrays ( λ = 3.7 um) with photonic crystals”.

2009

30 November 2009

Ph.D. student Chaus M.V. will present report on “p-InAsSbP/n-InAs LEDs at high pumping conditions” at the 9-th conference on semiconductors and nano-optoelectronics for young scientists (30 Nov.- 4 Dec. 2009, St Petersburg Academic University — Nanotechnology Research and Education Centre).

20 November 2009

MIRDOG team work on IR LEDs and PDs was nominated as one of the best works of Ioffe Institute in 2009. Ioffe Institute, November 2009.

27 August 2009

S. A. Karandashev will present a poster on “Mid-IR LED arrays with Photonic Crystals” at the The Second Nanotechnology International Forum  October 6 – 8, 2009, Moscow, Central Exhibition Complex “Expocentre” .

27 August 2009

Boris Matveev has scheduled a report on "Mid-IR LEDs, hollow waveguide devices and Si cantilever devices for hybrid integrated photoacoustic gas sensor" at the  4th concertation meeting on "Photonics-Enabled Applications" 10-11 September 2009, Athens - Greece.

11 November  2008

MIRDOG has delivered first LED samples to MINIGAS consortium for testing in miniaturised photoacoustic gas sensor based on patented interferometric readout and novel photonic integration technologies.

11 November  2008

Boris Matveev will present a poster report on “Midinfrared diode arrays and LEDs based on In(Ga)As(Sb) with Photonic Crystals” at the Nanotechnology International Forum  in Moscow 3-5 December 2008.

27 October  2008

G. Sotnikova will present poster report A4P-G3 "MODELING OF PERFORMANCE OF MID-INFRARED GAS SENSORS BASED ON IMMERSION LENS DIODE OPTOPAIRS" (G. Sotnikova, S. Aleksandrov, G. Gavrilov, A. Kapralov, B. Matveev, M. Remennyi, and K. Sotnikov)" at the IEEE SENSORS 2008 Section "Optical Sensors II" LECCE, ITALY.

8 September 2008

B. A. Matveev will make an oral presentation of the report "InAs(Sb) backside illuminated photodiodes and LEDs with deep mesa" at  9 ^th International Conference on Mid-Infrared Optoelectronics: Materials and Devices  (MIOMD-IX, 7 ^th - 11 ^th September 2008, Freiburg, Germany ).

3 May 2008

Boris Matveev has scheduled an oral report on “Broad band InAsSb backside illuminated photodiodes with a cut-off wavelength of 4.5 um” at the 20-th International technological conference on photoelectronics and night vision devices (30 May , 11.45 a.m., Moscow, Russia).

29 October 2007

Scientific work “Invention and utilization of negative luminescence effect in semiconductor devices” by V.I.Ivanov-Omskii, V.I.Smirnov, B.A.Matveev and N.M.Stus’ was nominated for Ya.I. Frenkel premium 2007 founded by Ioffe Institute Scientific Council.

21 June 2007

 Ms. Usikova A.A. will present poster report on “Optically pumped LEDs (l=3.3 um) based on InAs photonic crystals” at the VIII Russian conference on physics of semiconductors “Semiconductors -2007”, Yekaterinburg,  30.09.2007-5.10.2007.

8 June 2007

Minister of Science and Education of RF Andrey Fursenko has awarded the winner of the Sixth “Russian innovations” competition Maxim Remennyi with a prize established by journal “Expert”.

30 April 2007

Project “Optical gas analyzers and pyrometry control units based on immersion Mid-IR (3 -5.5 um) diode optopairs” (Author – Sotnikova G.Yu.)  has been included for funding within the RAS program for innovation support.

IoffeLED, Ltd. was awarded by a silver medal for presentation its project “Immersion lens LEDs and photodiodes for the mid-IR (3-5 um) spectral range” at the VII Moscow Innovation International Salon of Innovation and Investments.

IoffeLED, Ltd. was awarded by a diploma for presentation its project “Chemical sensors based on infrared (3-5 um) immersion lens LEDs and photodiodes” at the 10-th International Venturing seminar “Russian Technologies for Industry. Nanotechnologies and optoelectronics in life sciences”, St.Petersburg, 1-3 November 2006 .

30 March 2007

Matveev Boris will present two reports on “GaInAsSb/GaSb (1.8-2.3 um) immersion lens photodiodes” (oral) and “Progress in InAs Infrared Photodiodes” (poster) at the 8th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD -VII)  which will take place from May 14-16, 2007 in Bad Ischl in Austria.

30 March 2007

Maksim Remennyy will present two reports on "InAs and InAs(Sb)(P) (3-5 um) immersion lens photodiodes for portable optic sensors " (oral paper 6585-03)  and "Performance of InAs-based Infrared Photodiodes" ( poster paper 6585-77) at the SPIE International Congress on Optics and Optoelectronics (Optical Sensors) held in Prague, April 16-20, 2007.  Prague Congress Centre , Prague, Czech Republic.

2006

Maksim Remennyy will present report on "Chemical sensors on the base of mid-IR (3-5 um) immersion LEDs and photodiodes" at the 10^th INTERNATIONAL VENTURING SEMINAR RUSSIAN TECHNOLOGIES FOR INDUSTRY: Nanotechnologies and optoelectronics in life sciences. Saint-Petersburg, 1-3 November 2006.

21 July 2006

S.A. Karandashev will present an oral report on "InAs based immersion lens photodiodes operating at room temperature" at 6-th  Conference on GaAs and III-V compounds ( 3-5 October, 2006, Tomsk, Russia).

31 March 2006

Maxim Remennyi  project  06-2-Н4.2-0201 "Immersion flip-chip photodiodes for the 3-5 um spectral range" has been supported by The Foundation for Assistance to Small Innovative Enterprises (FASIE) within the state program START-2006.

19 December 2005

New product - photodiode amplifier - has been launched. We are thus expecting increase of photodiode orders due to existence of quite friendly interface between low resistance photodiode ( from InAs, InAsSb etc.) and conventional laboratory equipment.

6 December 2005

A. Koriuk has made oral presentation of the report "GaInAsSb backside illuminated photodiodes operating in the 1.9-2.2 um spectral range at 20-140 ^oC" at the "VII-Russian young scientists conference on semiconductor optoelectronics and nanoelectronics" (5-9 December 2005, St.Petersburg).

28 November 2005

Matveev B. has presented oral report at the MRS Fall Meeting 2005 “3.3-4.3 um high brightness LEDs".

Maxim Remennyi research project "Mid-IR (3-5 um) Negative and Positive Luminescence Sources from InAs Based Solid Solution with microstructured surface" (№ МК-1804.2005.02) was nominated for funding within the Russian President program for support young scientists and leading scientific schools.

29 June 2005

S.A.Aleksandrov has scheduled a report on “Portable gas analyzers based on immersion lens Mid-IR diode optopairs: model, construction and testing” at the VIII International Conference For Young Researchers "Wave Electronics and its Applications in the Information and Telecommunication Systems" St.Petersburg, Russia. 4-9 September 2005.

27 June 2005

Matveev B. has scheduled two oral reports at the MIOMD-VII Conference: “Mid-IR deep mesa LEDs " and "Single channel gas analyzers based on immersion lens Mid-IR diode optopairs ".

29 May 2005

57.0347 US PCT (“Radiation source”, B. Matveev et al. ) is granted as patent US 6 876 006  with grant date 5 April 2005.

B.Matveev project # 05-2-Н4-0159 was supported by The Foundation for Assistance to Small Innovative Enterprises (FASIE) set up by Russian government resolution No. 65 of February 3, 1994 within the innovation program START-2005.   Small Innovative enterprise goal is to develop and market Optically Pumped mid-IR LEDs (US patent #6 876 006 with grant date 5 April 2005, GB patent #2363906 with grant date 22 October 2003).

5 May 2005

V.V. Tetyorkin has scheduled an oral report on "p-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors" (V.V. Tetyorkin, A.V. Sukach, S.V. Stariy, Institute of Semiconductor Physics, Ukraine; B.A. Matveev, N.V. Zotova, S.A. Karandashev, M.A. Remennyi, N.M. Stus, Ioffe Physico-Technical Institute, Russia) # [5957-35] on 30 August 2005 at the SPIE conference on Optics and Optoelectronics in Warsaw (Poland).

Dr. B. Matveev decided to expose letters written by his relatives during the Leningrad siege (Blokada) in 1942 as a contribution to the celebration of the 60 anniversary of the War II ending.

G.Sotnikova has scheduled a report on “Portable Gas Analyzer Based on mid-IR Diode Optopairs” at the SPIE – RUS conference on “Lasers for medicine, biology and ecological monitoring -2005”( 19-20 January 2005, St.Petersburg) .

Uelin V.V. has scheduled a poster report (P12) on “InAs epitaxial layers for resonant cavity LEDs” at the “VI-Russian young scientists conference on semiconductor optoelectronics and nanoelectronics” (6-10 December 2004, St.Petersburg).

B.A. Matveev has scheduled an oral report "New generation of optically active diodes in photometry and optics" at the III International Optical Congress «Optics - XXI century» (18-22 October 2004, St.Petersburg).

First InAs epilayer has been successfully grown by the MOCVD process using AIX 200 system (for the details visit AIXTRON press release dated 19 November 2003.

Maxim Remennyi research project “Vertically emitting InAs/InAsSbP DH LEDs and lasers for the 3-4 um spectral range” was nominated for funding within the St.Petersburg program for support young scientists (grant № PD04-1.2-259.

Sukach A.V. has scheduled an oral report on p-InAsSbP/n-InAs photodiodes at the 18-th International technological conference on photoelectronics and night vision devices ( May 25-28, 2004, Moscow, Russia) .

B.A. Matveev has scheduled an oral report on the “Vertically emitting InAs LEDs and lasers with mirror anode” and  “InAs and InAsSbP Flip-chip LEDs for Fiber Optic Liquid Sensing in the 3-3.3 um spectral range" as poster report at the 6th International Conference "Mid-Infrared Optoelectronics Materials and Devices (MIOMD-VI)" (June 28 - July 02 2004, St.Petersburg).

V. Malyutenko has scheduled an oral report on the "InAs(Sb) LEDs and negative luminescent devices for dynamic scene simulation in the first atmospheric window (3-5 um)" as oral report at the 6th International Conference "Mid-Infrared Optoelectronics Materials and Devices (MIOMD-VI)" (June 28 - July 02 2004, St.Petersburg).

S.A. Karandashev has scheduled a poster report on the “Vertically emitting InAs LEDs and lasers with cavity formed by gold anode and semiconductor/air interface” at the 4^th International conference on physics of  light-matter coupling in nanostructures (June 29 - July 3, 2004 St. Petersburg, RUSSIA).

19 April 2004

MIRDOG has introduced new product – diode optopair tester for the first time users (description in Russian (600K)).

S.A Karandashev will present the following report at the 6-th Russian Semiconductor Physics Conference: “Negative Luminescence in narrow gap A3B5 heterostructures”.

The role of Professor D.N. Nasledov in formulating and development of physics and technology of AIIIBV semiconductors

( ФТП. 2003. Т. 37. в.8. стр.897. (in Russian)).

A.R.T. Photonics (Germany) and MIRDOG have launched new joint product – FIBER DIODES – LEDs and detectors coupled with fibers.

Dr. Matveev has scheduled a report on “Flip-chip” mid-IR LEDs for fibre optic chemical sensing at the poster session of the "Northern Optics 2003" conference : 16-18 June 2003 , Espoo (Finland).

Maxim Remennyi research project «Mid-IR (3-5 um) Negative Luminescent A3B5 Based Devices with Built-in Cavities» (№ МК-1597.2003.02) was nominated for funding within the Russian President program for support young scientists and leading scientific schools.

B. Matveev, V. Vaynshteyn and M. Remennyi have applied for RF patent on “Method for optical detection of gaseous components”, application  2003110480.

Dr.Remennyi has scheduled an oral report on “InGaAsSb negative luminescent devices with built-in cavities emitting at 3.9 um” at the "Narrow Gap Semiconductors -11" conference to be on 16-20 June 2003.

 

New MIRDOG service: 2D infrared mapping of the “flip chip” LEDs on a special order.

 

The following papers have been accepted for publication:

B.A. Matveev, M. Aydaraliev, N.V. Zotova, S.A. Karandashov, N.D. Il’inskaya, M.A. Remennyi, N.M. Stus' and G.N. Talalakin, "Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3 um spectral region" in IEE Optoelectronics.

M.A. Remennyi, N.V. Zotova, S.A. Karandashev, B.A. Matveev, N.M. Stus’, G.N.Talalakin, "Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 um spectral range" in Sensors & Actuators B: Chemical

M.Aidaraliev, N. V. Zotova, N .D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’ and G. N. Talalakin, "InAs and InAsSb LEDs with built-in cavities" in Semiconductor Science & Technology..

2002

Dr. Matveev presented invited report "In(Ga)As- and InAs(Sb)-Based Heterostructure LEDs and Detectors for the 3-5 um Spectral Range" at the MIOMD-V conference in Annapolis (USA).

 Dr. Matveev filed a patent on “Radiation Source” to Russian Federation Patent Office (application number : # 2002119616 from 16/07/2002) that cover construction of the immersion lens LEDs and “resonant cavity” LEDs presented in the MIOMD-V report and abstract.