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Abstract—Analysis of current-voltage and spectral characteristics of photodiodes based on a single p-InAsSbP/n-InAs heterostructure formed on a heavily doped n⁺-InAs substrate (n+ ~10¹⁸ cm^–3) is presented. It is shown that, at low temperatures (77 < T < 190 K), the generation–recombination current passage mechanism typical of p–i–n diodes dominates. Expected parameters of the photodiode that can be obtained using these heterostructures are presented.