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Semicond. Sci. Technol. 18 (April 2003) 269-272 InAs and InAsSb LEDs with built-in cavities B. A. Matveev, M. Aidaraliev, N. V. Zotova, N .D. Il’inskaya, S. A. Karandashev, M. A. Remennyi, N. M. Stus’ and G. N. Talalakin, The emission of episide down
bonded InAsSbP/In(Ga)As/n+-InAs and graded InAsSb(P) light-emitting
diodes (LEDs) with
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max
= 3.3-5.5
m
has been modified with an 'internal' Fabry-Perot cavity or bandpass filter
attached to the LED with an optical glue. Positive and negative emission with
the full width at half-maximum close to that of the filter (8-20 meV) have been
obtained in the 20-50 °C temperature range.