Semiconductors -- January 2002 -- Volume 36, Issue 7 pp. 828-831

“Immersion” lens infrared light emitting diodes with optical excitation on the base of narrow-gap AIIIBV semiconductors.

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin

Spectral and power characteristics of light emitting diodes (LEDs) with GaAs pump LED comprising narrow gap layers of In(Ga)As, InAsSb(P) or InAs onto n+-InAs (band width »l_max/10) or InSb (band width »1-2.5 mm) substrate and emitting at 3.3 - 7 mm are reported. LEDs equipped with immersion lens ehxibited conversion efficiency as high as 0.08-3 mW/A that is close to the best reported values for injection LEDs.