Technical Physics Letters -- January 2004 -- Volume 30, Issue 1, pp. 15-18

N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', N. A. Voronova, G. M. Gusinskii, and V. O. Naidenov

Proton irradiation of undoped n-InAs allowed a compensated material to be obtained with the degree of compensation K ~ 0.6. A regime of irradiation was selected to provide for a uniform distribution of radiation defects in depth of the semiconductor plate. The free electron density in irradiated InAs reaches up to 1 Ч 1018 cm–3, which corresponds to the Fermi level fixed in the region of allowed states with a wave vector of = 0 in the conduction band (in contrast to other AIIIBV semiconductor compounds, in which the Fermi level of a material with radiation defects occurs in the middle of the bandgap). The obtained results confirm the model of Brudnyi et al. [1].