Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics

M. A’daraliev, N.V. Zotova, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, N.M. Stus’, G.N. Talalakin, V.V. Shustov, V.V. Kuznetsov and E.A. Kognovitskaya

It is reported that a Ga_0.92In_0.08P_0.05As_0.08Sb_0.87 quinary solid solution, which is lattice-matched to InAs, with a band gap of 695 meV (77 K) and 640 meV (300 K) is obtained. It is demonstrated that a heterojunction of type II is realized in the InAs/Ga_0.92In_0.08P_0.05As_0.08Sb_0.87 structure. The solid solution obtained was used for the development of prototypes of light-emitting diodes and photodiodes with the highest intensity of emission and photosensitivity in the vicinity of 1.9 µm.