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Recent papers published by the MIRDOG group:                                   Full list of papers

Injection LEDs

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remenniy N. M. Stus', and G. N. Talalakin, “Light Emitting Diodes for the Spectral Range of l =3.3-4.3 µm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C”, Semiconductors, vol.34 (2000), No 1, pp.102-105

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi N. M. Stus’, and G. N. Talalakin ,”Light Emitting Diodes for the Spectral Range l = 3.3-4.3 mm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range 20–180°C (Part 2)” Semiconductors, Vol. 35, No. 5, 2001, pp. 598–604.

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remenny , N. M. Stus’, and G. N. Talalakin , “Radiative Recombination via Direct Optical Transitions in InGaxAs (0 <x< 0.16) Solid Solutions”, Semiconductors, Vol. 35, No. 12, 2001, pp. 1369–1371.

B. A. Matveev, N. V. Zotova, N .D. Il’inskaya, S. A. Karandashev, M. A. Remennyi, N. M. Stus’ and G. N. Talalakin. "Towards efficient mid-IR LED operation: optical pumping, extraction or injection of carriers? ”, J.Mod.Optics, v.49 (2002), No 5/6, pp. 743-756

V. K. Malyutenko, O.Yu.Malyutenko, A. D. Podoltsev, I.N.Kucheryavaya, B. A. Matveev, M. A. Remennyi, N. M. Stus', “CURRENT CROWDING IN InAsSb LED STRUCTURES”, Applied Physics Letters, v.79, issue 25 (2001), p. 4228-4230, December 17

M. Aydaraliev, N.V. Zotova, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, N.M. Stus’, G.N. Talalakin, V.V. Shustov, “Two-Wavelength Emission from a GaInPAsSb/InAs Structure with a Broken-Gap Isotype Heterojunction and a p–n Junction in the Substrate” Tech.Phys.Lett., Vol. 28, No. 12, 2002, pp. 1001–1003. Translated from Pis’ma v Zhurnal Tekhnicheskoi Fiziki, Vol. 28, No. 23, 2002, pp. 58–62.

B. A. Matveev, M. Aidaraliev, N. V. Zotova, N .D. Il’inskaya, S. A. Karandashev, M. A. Remennyi, N. M. Stus’ and G. N. Talalakin. "In(Ga)As- and InAs(Sb)-Based Heterostructure LEDs and Detectors for the 3¸ 5 m m Spectral Range", Abstract of the 5th International Conference on Mid-Optoelectronics Materials and Devices (MIOMD-V), September 8-11, 2002, Annapolis, Maryland, USA

B. A. Matveev, M. Aidaraliev, N. V. Zotova, N .D. Il’inskaya, S. A. Karandashev, M. A. Remennyi, N. M. Stus’ and G. N. Talalakin, "InAs and InAsSb LEDs with built-in cavities", Semicond. Sci. Technol. 18 (April 2003) 269-272

B. A. Matveev, N. V. Zotova, N.D.Il’inskaya, S. A. Karandashev, M. A. Remennyi, N. M. Stus’ , Kovchavtsev A.P., Kuryshev G.L., Polovinkin V.G. "3.3 um high brightness LEDs". Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications, MRS Proceedings Volume 891, paper 0891-EE01-04, 2005.

N.V. Zotova, N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, N.M. Stus’, A.A. Shlenski , «The Flip-Chip InGaAsSb/GaSb LEDs Emitting at a Wavelength of 1.94 mm», Semiconductors 2006, Vol. 40, No. 3, pp. 351–356 ( published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 3, pp. 356–361).

N.V. Zotova, N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remennyi and N. M. Stus’. “Flip-Chip LEDs with Deep Mesa, Emitting at 4.2 um “, Semiconductors, 2006, Vol. 40, No. 6, pp. 697–703.

Boris A. Matveev , ”LED-Photodiode Opto-pairs” in Mid-infrared Semiconductor Optoelectronics, Springer Series in OPTICAL SCIENCE, ISSN 0342-4111, pp. 395- 428, 2006

N.V. Zotova , N.D. Il’inskaya , S.A. Karandashev , B.A. Matveev , M.A. Remenny, N.M. Stus’ , V.V. Shustov and N.G. Tarakanova, “InAs Flip-Chip LEDs with InGaAsSb Buffer Layers”, Semiconductors, 2006, Vol. 40, No. 8, pp. 977–981 (Original Russian Text published in Fizika I Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 8, pp. 1004–1008)

N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev ,M. A. Remennyi, and N. M. Stus’ ”Sources of Spontaneous Emission Based on Indium Arsenide (REVIEW)” Semiconductors, 2008, Vol. 42, No. 6, pp. 625–641. © Pleiades Publishing, Ltd., 2008. Original Russian Text © N.V. Zotova, N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, N.M. Stus’, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008,Vol. 42, No. 6, pp. 641–657.

B.A. Matveev, Yu. M. Zadiranov, A. L. Zakgeim, N. V. Zotova N. D. Il'inskaya, S. A. Karandashev, M. A. Remennyy, N. M. Stus', A. A. Usikova, O.A. Usov, A.E. Cherniakov “Midinfrared (λ= 3.6 um) LEDs and arrays based on InGaAsSb with photonic crystals”, Photonic and Phononic Crystal Materials and Devices IX, edited by Ali Adibi, Shawn-Yu Lin, Axel Scherer, Proc. of SPIE Vol. 7223, 72231B · © 2009 SPIE · CCC code: 0277-786X/09/$18 · doi: 10.1117/12.808130 Proc. of SPIE Vol. 7223 72231B-1

A. L. Zakhgeim, N. V. Zotova, N. D. Il’inskaya, B. A. Matveev^, M. A. Remennyi, N. M. Stus’, and A. E. Chernyakov ”Array of InGaAsSb light-emitting diodes (λ = 3.7 um)”, Semiconductors, 2009, Vol. 43, No. 4.

A. L. Zakhgeim, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev^, M. A. Remennyi, A. E. Chernyakov and A. A. Shlenskii “Emission Distribution in GaInAsSb/GaSb Flip-Chip Diodes”, Semiconductors, 2009, Vol. 43, No. 5, pp. 662–667. © Pleiades Publishing, Ltd., 2009. Original Russian Text © A.L. Zakgeim, N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, A.E. Cherniakov, A.A. Shlenskii, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 5, pp. 689–694.

Negative Luminescence devices

B.A. Matveev, M. A'daraliev, N.V. Zotova, S.A. Karandashev, M.A. Remenniy, N.M. Stus', G.N. Talalakin, V.K. Malyutenko and O.Yu. Malyutenko “Negative luminescence from InAsSbP-based diodes in the 4.0-4.3 µm range”, Testing, Reliability, and Applications of Optoelectronic Devices, Editor(s): Aland K. Chin and Niloy K. Dutta, SPIE Proceedings Vol. 4285, pp.109-117

M. Aidaraliev, N.V. Zotova, S.A. Karandashev, B.A. Matveev, M.A. Remenniy, N.M. Stus', G.N. Talalakin, V.K. Malyutenko and O. Yu. Malyutenko. “4 mm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20–180°C”, SPIE vol.4355, pp.161-167, 2000.

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and G. N. Talalakin “Negative Luminescence in p-InAsSbP/n-InAs Diodes”, Semiconductors Vol.35 (2001), No 3, pp.335 – 338

B. A. Matveev, N. V. Zotova, S. A. Karandashev, M. A. Remennyi, N. M. Stus’ and G. N. Talalakin. “Towards longwave (5¸ 6 m m) LED operation at 80^oC : injection or extraction of carriers?”, IEE Proceedings - Optoelectronics v. 149 (2002) , Issue 1, pp. 33 - 35.

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin. "Negative Luminescence at 3.9 µm in InGaAsSb-Based Diodes", Semiconductors, Vol. 37 (2003), No 8, pp. 927-930

M.A. Remennyi, B.A. Matveev, N.V. Zotova, S.A. Karandashev, N.M. Stus' and G.N. Talalakin. "InGaAsSb negative luminescent devices with built-in cavities emitting at 3.9 mm", Physica E: Low-dimensional Systems and Nanostructures, Vol. 20(3-4), pp. 548-552 ( 2004)

V.I. Ivanov-Omskii and B.A. Matveev. ”Negative Luminescence and Devices Based on this Phenomenon (REVIEW)”, SEMICONDUCTORS Vol. 41, No. 3, 247-258 (2007) Original Russian Text published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 3, pp. 257–268.

OP LEDs

N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, and V. V. Shustov, “Optically Pumped Mid-Infrared InGaAs(Sb) LEDs” Semiconductors Vol.35 (2001), No 3, pp.371 – 374

B.A. Matveev, N.V. Zotova, S.A. Karandashev, M.A. Remenniy, N.M. Stus', G.N. Talalakin, “III-V optically pumped mid-IR LEDs”, Proc. SPIE vol. 4278, pp. 189-196, Light-Emitting Diodes: Research, Manufacturing, and Applications V, H. Walter Yao, E. Fred Schubert, Eds.

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin . “Immersion” lens infrared light emitting diodes with optical excitation on the base of narrow-gap AIIIBV semiconductors. Semiconductors, Vol. 36 (7), pp. 828-831, 2002

B.A. Matveev, N.V. Zotova, N.D. Il’inskaya, S.A. Karandashov, M.A. Remennyi, N.M. Stus', G.N. Talalakin, “Radiation Source”, GB patent #2363906 from 22 October 2003, US 6 876 006 with grant date 5 April 2005

N.V. Zotova, S.A. Karandashev, B.A. Matveev, M.A. Remennyi ,N.M. Stus’, and N.G. Tarakanova. ”Luminescence of Multilayer Structures Based on InAsSb at λ= 6–9 µm”. Semiconductors, Vol. 39, No. 2, 2005, pp. 214–217. Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 2, 2005, pp. 230–233.

Yu. M. Zadiranov, N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev , M. A. Remennyy , N. M. Stus’, and A. A. Usikova “Optically Pumped Midinfrared ( lambda = 3.6 um) Light-Emitting Diodes Based on Indium Arsenide with Photonic Crystals” Technical Physics Letters, 2008, Vol. 34, No. 5, pp. 405–407. © Pleiades Publishing, Ltd., 2008. Original Russian Text © Yu.M. Zadiranov, N.V. Zotova, N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remenny , N.M. Stus’, A.A. Usikova, 2008, published in Pis’ma v Zhurnal Tekhnichesko i Fiziki, 2008, Vol. 34, No. 10, pp. 1–7.

Lasers

M.Aidaraliev, N.V.Zotova, S.A.Karandashov, B.A. Matveev, M.A.Remennyi, N.M.Stus', G.N. Talalakin , T. Beyer and R. Brunner «Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (l =3.0-3.6 mm)», Semiconductors, Vol.34, No 4, 2000, pp.488-492

M. Aidaraliev, T. Beyer, N.V. Zotova, S.A. Karandashev, B.A. Matveev, M.A. Remenniy, N.M. Stus', G.N. Talalakin “InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (l =3.0-3.3 mm) for Diode Laser Spectroscopy” Semiconductors Vol.34 (2000), No 7, pp.848-852

M. Aydaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and G. N. Talalakin “High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (l = 3.3 mm)” Semiconductors, Vol. 35, No. 10, 2001, pp. 1208–1212.

Matveev, Boris A.; Aydaraliev, Meyrhan; Zotova, Nonna V.; Karandashov, Sergey A.; Remennyi, Maxim A.; Stus', Nikolai M.; Talalakin, Georgii N. “High-power and single-mode DH InGaAsSb(Gd)/InAsSbP (l =3.3 mm) diode lasers”, Proc. SPIE Vol. 4278, p. 13-18, Light-Emitting Diodes: Research, Manufacturing, and Applications V, H. Walter Yao; E. Fred Schubert; Eds.

M. Aydaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, W. W. Bewley, J. R. Lindle, and J. R. Meyer, “6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at l =3.3 µm), Applied Physics Letters -- August 12, 2002 -- Volume 81, Issue 7, pp. 1166-1167

B. Matveev, N. Zotova, N. Il’inskaya, S. Karandashev, M. Remennyi and N. Stus’. “Spontaneous and stimulated emission in InAs LEDs with cavity formed by gold anode and semiconductor/Air interface”. Phys. stat. sol. (c), Vol.2, No. 2, 927–930 (2005)

Photodetectors

Matveev, Boris A.; Zotova, Nonna V.; Karandashev, Sergey A.; Remennyi, Maxim A.; Stus', Nikolai M.; Talalakin, Georgii N. “Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 mm”, Proc. SPIE Vol 4650, p.173-178, Photodetector Materials and Devices VII (2002)

B.A. Matveev, M. Aydaraliev, N.V. Zotova, S.A. Karandashov, N.D. Il’inskaya, M.A. Remennyi, N.M. Stus' and G.N. Talalakin, "Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3 m m spectral region", IEE Proc.- Optoelectron., v. 150 (2003) , No. 4, pp. 356 - 359.

M. A. Remennyy; B. A. Matveev; N. V. Zotova; S. A. Karandashev; N. M. Stus; N. D. Ilinskaya “InAs and InAs(Sb)(P) (3-5 um) immersion lens photodiodes for portable optic sensors” SPIE Proceedings Vol. 6585 (Optical Sensing Technology and Applications) , Editor(s): Francesco Baldini; Jiri Homola; Robert A. Lieberman; Miroslav Miler, Date: 1 May 2007, ISBN: 9780819467133. , 658504, DOI: 10.1117/12.722847

Tetyorkin,V.V.; Sukach,A.V.; Star,S.V.; Zotova,N.V.; Karandashev,S.A.; Matveev,B.A.; Remennyi,M.A.; Stus,N.M., “Performance of InAs-based infrared photodiodes”, Proc. SPIE , v.6585, #658520 (Optical Sensing Technology and Applications) , Editor(s): Francesco Baldini; Jiri Homola; Robert A. Lieberman; Miroslav Miler, Date: 1 May 2007.

S.A. Karandashev, B.A. Matveev, M.A. Remennyi, A.A. Shlenskii, L.S. Lunin, V.I. Ratushnyi, A.V. Koryuk, N.G. Tarakanova,, “Properties of GaInAsSb/GaSb (Lambda = 1.8–2.3 um) Immersion Lens Photodiodes at 20–140 C” Semiconductors, 2007, Vol. 41, No. 11, pp. 1369–1374. 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 11, pp. 1389–1394.

Sensors

M.A. Remennyi, N.V. Zotova, S.A. Karandashev, B.A. Matveev, N.M. Stus’ and G.N. Talalakin, "Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 mm spectral range", Sensors & Actuators B: Chemical, Vol.91(1-3) , pp. 256-261 (2003)

S.E. Alexandrov, G.A. Gavrilov, A.A. Kapralov, S.A. Karandashev, B.A. Matveev, G.Y. Sotnikova, N.M. Stus'. “Portable optoelectronic gas sensors operating in the mid-IR spectral range (l=3-5 µm)”, Proc. SPIE Vol.4680, pp. 188-194, Second International Conference on Lasers for Measurement and Information Transfer, Vadim E.Privalov, Ed.

B. A. Matveev, N.V.Zotova, S. A. Karandashev, M. A. Remennyi, N. M. Stus' and G.N.Talalakin “3.4 mm “Flip-chip” LEDs for Fiber Optic Liquid Sensing” Proceedings of the 1-st International CONFERENCE on ADVANCED OPTOELECTRONICS and LASERS (CAOL'2003), September 16-20, 2003 Alushta, Crimea, Ukraine v.2, pp138-140

UK Patent Application GB 2 402 476 A. Published 08.12.2004. Title: Downhole mid infrared gas monitor. Inventors: T. Jones, B. Matveev, V. Vaynshteyn, C. Besson, O. Mullins, L. Jiang

M. A. Remennyy; B. A. Matveev; N. V. Zotova; S. A. Karandashev; N. M. Stus; N. D. Ilinskaya “InAs and InAs(Sb)(P) (3-5 um) immersion lens photodiodes for portable optic sensors” SPIE Proceedings Vol. 6585 (Optical Sensing Technology and Applications) , Editor(s): Francesco Baldini; Jiri Homola; Robert A. Lieberman; Miroslav Miler, Date: 1 May 2007, ISBN: 9780819467133. , 658504, DOI: 10.1117/12.722847

S.A. Karandashev, B.A. Matveev, M.A. Remennyi, A.A. Shlenskii, L.S. Lunin, V.I. Ratushnyi, A.V. Koryuk, N.G. Tarakanova,, “Properties of GaInAsSb/GaSb (Lambda = 1.8–2.3 um) Immersion Lens Photodiodes at 20–140 C” Semiconductors, 2007, Vol. 41, No. 11, pp. 1369–1374. 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 11, pp. 1389–1394.

G.Yu.Sotnikova, S.E.Aleksandrov, G.A.Gavrilov, A.A.Kapralov, B.M.Matveev, M.A.Remennyy, «Modeling of Performance of Mid-Infrared Gas Sensors Based on Immersion Lens Diode Optopairs» IEEE SENSORS 2008 Section "Optical Sensors II" LECCE, ITALY, Proceedings

S. E. Aleksandrov, G. A. Gavrilov, A. A. Kapralov, B. A. Matveev, G. Yu. Sotnikova, and M. A. Remennyi, “Simulation of Characteristics of Optical Gas Sensors Based on Diode Optopairs Operating in the Mid-IR Spectral Range” ISSN 1063_7842, Technical Physics, 2009, Vol. 54, No. 6, pp. 874–881. © Pleiades Publishing, Ltd., 2009. Original Russian Text © S.E. Aleksandrov, G.A. Gavrilov, A.A. Kapralov, B.A. Matveev, G.Yu. Sotnikova, M.A. Remennyi, 2009, published in Zhurnal Tekhnicheskoі Fiziki, 2009, Vol. 79, No. 6, pp. 112–118.

T. Kuusela, J. Peura, B. A. Matveev, M. A. Remennyy, N. M. Stus’ «Photoacoustic gas detection using a cantilever microphone and III–V mid-IR LEDs», Vibrat. Spectrosc. (2009), doi:10.1016/j.vibspec.2009.08.001.

Miscellaneous

L.A.Kulakova, B.A.Matveev, B.T.Melekh, “Si-Te acousto-optic modulator for the 1.7-10.6 mm region”, Journal of Non-Crystalline Solids 266-269 (2000) 969-972.

M. Aydaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, “Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics” Semiconductors, Vol. 36, No. 8, 2002, pp. 944–949.

N.V. Zotova, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, N.M. Stus', N.A. Voronova, G.M. Gusinskii, and V.O. Naidenov, "Strongly Compensated InAs Obtained by Proton Irradiation", Tech.Phys.Lett., Vol. 30 (1), pp. 15-18 (2004)

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