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Papers published by the MIRDOG group during last 10-years:                                   Full list of papers

LEDs (11)

N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev ,M. A. Remennyi, and N. M. Stus’ ”Sources of Spontaneous Emission Based on Indium Arsenide (REVIEW)” Semiconductors, 2008, Vol. 42, No. 6, pp. 625–641. © Pleiades Publishing, Ltd., 2008. Original Russian Text © N.V. Zotova, N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, N.M. Stus’, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008,Vol. 42, No. 6, pp. 641–657.

B.A. Matveev, Yu. M. Zadiranov, A. L. Zakgeim, N. V. Zotova N. D. Il'inskaya, S. A. Karandashev, M. A. Remennyy, N. M. Stus', A. A. Usikova, O.A. Usov, A.E. Cherniakov “Midinfrared (λ= 3.6 um) LEDs and arrays based on InGaAsSb with photonic crystals”,  Photonic and Phononic Crystal Materials and Devices IX, edited by Ali Adibi, Shawn-Yu Lin, Axel Scherer, Proc. of SPIE Vol. 7223, 72231B · © 2009 SPIE · CCC code: 0277-786X/09/$18 · doi: 10.1117/12.808130  Proc. of SPIE Vol. 7223 72231B-1

A. L. Zakhgeim, N. V. Zotova, N. D. Il’inskaya, B. A. Matveev^, M. A. Remennyi, N. M. Stus’, and A. E. Chernyakov ”Array of InGaAsSb light-emitting diodes (λ = 3.7 um)”, Semiconductors, 2009, Vol. 43, No. 4.

A. L. Zakhgeim, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev^, M. A. Remennyi, A. E. Chernyakov and A. A. Shlenskii “Emission Distribution in GaInAsSb/GaSb Flip-Chip Diodes”, Semiconductors, 2009, Vol. 43, No. 5, pp. 662–667. © Pleiades Publishing, Ltd., 2009. Original Russian Text © A.L. Zakgeim, N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remennyi, A.E. Cherniakov, A.A. Shlenskii, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 5, pp. 689–694.

B.A. Matveev, Yu.M. Zadiranov, A. L. Zakgeim, N.D. Il'inskaya, S.A. Karandashev, M.A. Remennyy, N.M. Stus', A. A. Usikova, A. E. Cherniakov, “InGaAsSb LED arrays (λ = 3.7 um) with Photonic Crystals” Photonic and Phononic Crystal Materials and Devices X, edited by Ali Adibi, Shawn-Yu Lin, Axel Scherer, Proc. of SPIE Vol. 7609, 76090I-1 -5 © 2010 SPIE · CCC code: 0277-786X/10/$18 · doi: 10.1117/12.841689

Boris Matveev, Maxim Remennyy, Karandashev Sergey, Kimmo Keränen, Heini Saloniemi, Jyrki Ollila, Tom Kuusela, Ismo Kauppinen, «Microimmersion lens LEDs for portable photoacoustic methane sensors», IMCS 2012 - The 14th International Meeting on Chemical Sensors May 20 - 23, 2012, Nürnberg/Nuremberg, Germany, p.241-243, DOI 10.5162/IMCS2012/2.5.5

N. V. Zotova, S. A. Karandeshev, B. A. Matveev, M. A. Remennyĭ, and N.M. Stus’, “Radiation distribution of 3.4-µm immersion LEDs in the far field” , Journal of Optical Technology, Vol. 79, Issue 9, pp. 571-575 (2012)
http://dx.doi.org/10.1364/JOT.79.000571

Parthiban Santhanam, Duanni Huang, Rajeev J. Ram, Maxim A. Remennyi, and Boris A. Matveev, “Room Temperature Thermo-Electric Pumping in mid-Infrared Light-Emitting Diodes”, Appl. Phys. Lett. 103 (19), 183513 (1 November 2013); doi: 10.1063/1.4828566

B. Matveev,  “LEDs Based On Heterostructures À3Â5 In Gas Analysis Instrument Engineering".   Photonics, #6 (December 2014).

Il`inskaya N.D.; Karandashev S.A.; Karpukhina N.G.; Lavrov A.A.; Matveev B.A.; Remennyi M.A.; Stus N.M.; Usikova A.A., " The 3x3 matrix based on p-InAsSbP/n-InAs single heterostructure diodes", Applied Physics, issue 6, 2014, Pages 47-51

B. Matveev, “Surprises of Medium-Wave IR LEDs Based on À3Â5 Heterostructures”, Photonics, v.2 (50) pp.: 62-69  (2015).______________________________________________________________________________

Negative Luminescence devices (2)

T. Kuusela, J. Peura, B. A. Matveev, M. A. Remennyy, and N. M. Stus’, “Photoacoustic effect induced by negative luminescence device”, J.Appl.Phys., 108, 014903 (2010); doi:10.1063/1.3456499 (6 pages)

S. A. Karandashev, B. A. Matveev, I. V. Mzhelskii, V. G. Polovinkin, M. A. Remennyi, A. Yu. Rybal’chenko and N. M. Stus’, “Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff λ0.1 = 5.2 μm)”, Semiconductors, Volume 46, Number 2, 247-250 (2012) , DOI: 10.1134/S1063782612020157

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Optically pumped LEDs (1)

Yu. M. Zadiranov, N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev , M. A. Remennyy , N. M. Stus’, and A. A. Usikova “Optically Pumped Midinfrared ( lambda = 3.6 um) Light-Emitting Diodes Based on Indium Arsenide with Photonic Crystals”  Technical Physics Letters, 2008, Vol. 34, No. 5, pp. 405–407. © Pleiades Publishing, Ltd., 2008. Original Russian Text © Yu.M. Zadiranov, N.V. Zotova, N.D. Il’inskaya, S.A. Karandashev, B.A. Matveev, M.A. Remenny , N.M. Stus’, A.A. Usikova, 2008, published in Pis’ma v Zhurnal Tekhnichesko i Fiziki, 2008, Vol. 34, No. 10, pp. 1–7.

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Photodiodes (23)

A. L. Zakhgeim, N. V. Zotova, N. D. Il’inskaya, B. A. Matveev^, M. A. Remennyi, N. M. Stus’, and A. E. Chernyakov «Room-Temperature Broadband InAsSb Flip-Chip Photodiodes with λ cut off = 4.5 um” Semiconductors, 2009, Vol. 43, No. 3, pp. 394–399. DOI 10.1134/S1063782609030257

N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyy, A. Yu. Rybal’chenko, and N. M. Stus’, ”Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes”, Semiconductors, 2011, Vol. 45, No. 4, pp. 543–549. © Pleiades Publishing, Ltd., 2011. ISSN 1063_7826, DOI 10.1134/S1063782611040245, Original Russian Text © N.V. Zotova, S.A. Karandashev, B.A. Matveev, M.A. Remennyy, A.Yu. Rybal’chenko, N.M. Stus’, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 4, pp. 554–559.

G.A. Gavrilov, B.A. Matveev, G.Yu. Sotnikova, “Limiting Sensitivity of Photodetectors Based on A3B5 Photodiodes for Middle Infrared Range”, ISSN 1063_7850, Technical Physics Letters, 2011, Vol. 37, No.9, pp. 866–869. © Pleiades Publishing, Ltd., 2011. Original Russian Text © G.A. Gavrilov, B.A. Matveev, G.Yu. Sotnikova, 2011, published in Pis’ma v Zhurnal Tekhnichesko³ Fiziki, 2011, Vol. 37, No. 18, pp. 50–57.

 N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, and N. M. Stus’, “Uncooled Photodiodes Based on InAsSb(P) with Long-Wavelength Sensitivity Boundary at λ = 5.8 um”, ISSN 1063_7850, Technical Physics Letters, 2012, Vol. 38, No. 3, pp. 242–244..Original Russian Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 5, pp. 85–90. (DOI) 10.1134/S1063785012030078

 N. D. Il’inskaya, A. L. Zakgeim, S. A. Karandashev, B. A. Matveev, V. I. Ratushnyi, M. A. Remennyi, A. Yu. Rybal’chenko, N. M. Stus’, and A. E. Chernyakov, "Front Surface Illuminated InAsSb Photodiodes (Long-Wavelength Cutoff λ0.1 = 4.5 um) Operating at Temperatures of 25–80°C",  Semiconductors, 2012, Vol. 46, No. 5, pp. 690–695,  Original Russian Text © N.D. Il’inskaya, A.L. Zakgeim, S.A. Karandashev, B.A. Matveev, V.I. Ratushnyi, M.A. Remennyi, A.Yu. Rybal’chenko, N.M. Stus’, A.E. Chernyakov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 5, pp. 708–713.

N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevost’yanov, and N. M. Stus’, “Cooled Photodiodes Based on a Type-II Single p-InAsSbP/n-InAs Heterostructure “ISSN 1063_7850, Technical Physics Letters, 2013, Vol. 39, No. 9, pp. 818–821. © Pleiades Publishing, Ltd., 2013. Original Russian Text © N.D. Il’inskaya, S.A. Karandashev, N.M. Latnikova, A.A. Lavrov, B.A. Matveev, A.S. Petrov, M.A. Remennyi, E.N. Sevost’yanov, N.M. Stus’, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 18, pp. 45–52.

P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev , M.A. Remennyi, N.M. Stus’,A.A. Usikova, “Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes», Infrared Physics & Technology 64 (2014) 62–65

P.N.Brunkov, N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, and N. M. Stus’, «P-InAsSbP/no-InAs/n+-InAs photodiodes for operation at moderate cooling (150-220 K)» Fizika i Tekhnika Poluprovodnikov, 48(10). pp. 1394-1397 (2014).

P.N.Brunkov, N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, and N. M. Stus’, «P-InAsSbP/no-InAs/n+-InAs photodiodes for operation at moderate cooling (150-220 K)», Semiconductors, 2014, Vol. 48, No. 10, pp. 1359–1362. © Pleiades Publishing, Ltd., 2014, ISSN 1063_7826

S.A. Karandashev, B.A. Matveev, V.I. Ratushnyi, M.A. Remennyi, A.Yu. Rybal’chenko, N.M. Stus’, “Current–Voltage Characteristics and Photocurrent Collection in Radially Symmetric Front Surface Illuminated InAsSb(P) Photodiodes”, ISSN 1063_7842, Technical Physics, 2014, Vol. 59, No. 11, pp. 1631–1635. © Pleiades Publishing, Ltd., 2014. Original Russian Text © 2014, published in Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 11, pp. 52–57.              http://link.springer.com/article/10.1134/S1063784214110115

B.A.Matveev, "Semiconductor mid-IR photodiode", RF patent  ¹ 2521156  after patent application ¹ 2011140568 from 05.10.2011. Published 29.02.2014.

N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and A. A. Usikova,  "The 3x3 matrix based on p-InAsSbP/n-InAs single heterostructure diodes" Applied Physics  2014 N6 p 47 (in Russian)

Brunkov P.N. Il`inskaya N.D., Karandashev S.A., Lavrov A.A., Matveev B.A.,  Remennyi M.A., Stus` N.M., Usikova A.A., «InAsSbP/InAs(0.9)Sb(0.1)/InAs DH photodiodes (lambda(0.1) = 5.2 um, 300 K) operating in the 77-353 K temperature range», Infrared Phys. Technol., v.73 ,pp. 232-237 (2015)

B. Matveev "On the Question of terminology in the medium wave infrared optoelectronics", Photonics #3/2015(51), pp. 152-164.

N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus' and A. A. Usikova, “Photodiode 1x64 Linear Array Based on a Double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs Heterostructure”, Semiconductors, 2016, Vol. 50, No. 5, pp. 646–651. DOI: 10.1134/S1063782616050122

P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, N.G. Karpukhina, A.A. Lavrov, B.A. Matveev, M.A. Remennyi a, N.M. Stus’, A.A. Usikova, “Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes”, Infrared Physics and Technology (2016), pp. 542-545, DOI information: 10.1016/j.infrared.2016.04.002

P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus’ a, A.A. Usikova, “P-InAsSbP/n-InAs single heterostructure back-side illuminated 8 x 8 photodiode array», Infrared Physics & Technology 78 (2016) 249–253http://dx.doi.org/10.1016/j.infrared.2016.08.013

A.L. Zakgeim, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyy, N.M. Stus’, A.A. Usikova and A.E. Cherniakov, “Spatial Redistribution of Radiation in Flip-Chip Photodiodes Based on Double InAsSbP/InAs Heterostructures”, Semiconductors, 2017, Vol. 51, No. 2, pp. 260–266.

N.D. Il'inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus', A.A. Usikova, "P-InAsSbP/p- InAs 0.88 Sb0.12 /n- InAs 0.88 Sb0.12 /n + -InAs PDs with a smooth p-n junction" Infrared Physics & Technology 88 , 223-227 (2018), doi:  https://doi.org/10.1016/j.infrared.2017.11.003

Natalya D. Il’ inskaya, Sergey A. Karandashev, Al ’bert A. Lavrov, Boris A. Matveev, Maxim A. Remennyi, Nicolay M. Stus ’, and Anna A. Usikova, “InAs0.7Sb0.3 Bulk Photodiodes Operating at Thermoelectric-Cooler Temperatures”, Phys. Status Solidi A 2018, 1700694,    https://doi.org/10.1002/pssa.201700694

N. D. Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and A. A. Usikova, “InAsSbP Photodiodes for 2.6–2.8-um Wavelengths”, Technical Physics, 2018, Vol. 63, No. 2, pp. 226–229.

DOI: 10.1134/S1063784218020172

 

N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi, “Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes”, Semicond. Sci. Technol. 33 (2018) 065016 (5pp),  https://doi.org/10.1088/1361-6641/aac15d

N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi, “Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes”, Semicond. Sci. Technol.34(2019) 015013 (5pp)   DOI: 10.1088/1361-6641/aaf0c6

 

 

Sensors (10)

S. E. Aleksandrov, G. A. Gavrilov, A. A. Kapralov, B. A. Matveev, G. Yu. Sotnikova, and M. A. Remennyi, “Simulation of Characteristics of Optical Gas Sensors Based on Diode Optopairs Operating in the Mid-IR Spectral Range” ISSN 1063_7842, Technical Physics, 2009, Vol. 54, No. 6, pp. 874–881. © Pleiades Publishing, Ltd., 2009. Original Russian Text © S.E. Aleksandrov, G.A. Gavrilov, A.A. Kapralov, B.A. Matveev, G.Yu. Sotnikova, M.A. Remennyi, 2009, published in Zhurnal Tekhnichesko³ Fiziki, 2009, Vol. 79, No. 6, pp. 112–118.

T. Kuusela, J. Peura, B. A. Matveev, M. A. Remennyy, N. M. Stus’ «Photoacoustic gas detection using a cantilever microphone and III–V mid-IR LEDs», Vibrat. Spectrosc. (2009), doi:10.1016/j.vibspec.2009.08.001.

Sotnikova, G. Y.; Gavrilov, G. A.; Aleksandrov, S. E.; Kapralov, A. A.; Karandashev, S. A.; Matveev, B. A.; Remennyy, M. A. "Low Voltage CO2-Gas Sensor Based on III–V Mid-IR Immersion Lens Diode Optopairs: Where we Are and How Far we Can Go?" Sensors Journal, IEEE Volume 10, Issue 2, Feb. 2010 Page(s): 225 – 234 Digital Object Identifier   10.1109/JSEN.2009.2033259

 K. Keränen, K. Kautio, J. Ollila, M. Heikkinen, I. Kauppinen, T. Kuusela, B. Matveev, M. E.McNie, R. M. Jenkins, P. Karioja, Differential photo-acoustic gas cell based on LTCC for ppm gas sensing, (Proceedings Paper) Published 23 February 2010  Vol. 7607: Optoelectronic Interconnects and Component Integration IX, Alexei L. Glebov; Ray T. Chen, Editors, 760714

 Karioja,P; Keranen,K; Kautio,K; Ollila,J; Heikkinen,M; Kauppinen,I; Kuusela,T; Matveev,B; McNie, ME; Jenkins,RM; Palve,J  “LTCC-based differential photo acoustic cell for ppm gas sensingProc. SPIE, v.7726, pages: #77260H 2010 SPIE ISSN: 0277-786X

K. Keränen, ,J. Ollila, H. Saloniemi, B. Matveev, J. Raittila, A. Helle, I. Kauppinen, T. Kuusela, L. Pierno, P. Karioja, M. Karppinen, “Portable Methane Sensor Demonstrator based on LTCC Differential Photo Acoustic Cell and Silicon Cantilever”, Procedia Engineering, Volume 47, 2012, Pages 1438–1441.

G.Yu.Sotnikova, S.E.Aleksandrov, G.A.Gavrilov, A.A.Kapralov, B.A.Matveev, M.A.Remennyi, M.Saadaoui, D.Zymelka, «Radiometric temperature measurements using In(Ga)As(Sb) backside illuminated photodiodes», Abstract of the 42-th Freiburg Infrared Colloquium, 3-4 March 2015, pp.89-90

Zymelka D., Matveev B., Aleksandrov S., Sotnikova G., Gavrilov G., Saadaoui M.,"Time-resolved study of variable frequency microwave processing of silver nanoparticles printed onto plastic substrates", Flex. Print. Electron. 2 (2017) 045006  (pp.1-10)( DOI: 10.1088/2058-8585/aa900a )

S.E. Aleksandrov, G.A. Gavrilov, A.A. Kapralov, B.A. Matveev, K.L. Muratikov, and G.Yu. Sotnikova, (2018), “Optoelectronic Methods of IR-Photometry in Solving Thermal and Physical Problems” in VII International Conference on Photonics and Information Optics, Energy & Physics, pages 349–361. DOI 10.18502/ken.v3i3.2048

S. E. Aleksandrov, G. A. Gavrilov, A. A. Kapralov, B. A. Matveev, M. A. Remennyi, and G. Yu. Sotnikova, “InAsSb Diode Optical Pairs for Real-Time Carbon Dioxide Sensors”, Technical Physics, 2018, Vol. 63, No. 9, pp. 1390–1395. ISSN 1063-7842

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Miscellaneous (2)

Trukhin,VN; Golubo,AO; Lyutetsky,AV; Matveyev,BA; Pikhtin,NA; Samoilov,LL; Sapozhnikov,ID; Tarasov,IS; Fel`shtyn,ML; Khor`kov,DP, Diagnostics of semiconductor structures by means of an apertureless near-field terahertz microscope, 2012, Radiophys. Quantum Electron., v.54, 8-9,  pp/: 577-584

Usikova A.A.; Il`inskaya N.D.; Matveev B.A.; Shubina T.V.; Kop`ev P.S., “Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges”, Semiconductors, December 2013, Volume 47, Issue 12, pp 1570-1573

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