Papers published by the MIRDOG group during last 10-years: 

                        Full list of papers

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 N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, and N. M. Stus’, “Uncooled Photodiodes Based on InAsSb(P) with Long-Wavelength Sensitivity Boundary at λ = 5.8 um”, ISSN 1063_7850, Technical Physics Letters, 2012, Vol. 38, No. 3, pp. 242–244..Original Russian Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 5, pp. 85–90. (DOI) 10.1134/S1063785012030078

 N. D. Il’inskaya, A. L. Zakgeim, S. A. Karandashev, B. A. Matveev, V. I. Ratushnyi, M. A. Remennyi, A. Yu. Rybal’chenko, N. M. Stus’, and A. E. Chernyakov, "Front Surface Illuminated InAsSb Photodiodes (Long-Wavelength Cutoff λ_0.1 = 4.5 um) Operating at Temperatures of 25–80°C",  Semiconductors, 2012, Vol. 46, No. 5, pp. 690–695,  Original Russian Text © N.D. Il’inskaya, A.L. Zakgeim, S.A. Karandashev, B.A. Matveev, V.I. Ratushnyi, M.A. Remennyi, A.Yu. Rybal’chenko, N.M. Stus’, A.E. Chernyakov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 5, pp. 708–713.

N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevost’yanov, and N. M. Stus’, “Cooled Photodiodes Based on a Type-II Single p-InAsSbP/n-InAs Heterostructure “ISSN 1063_7850, Technical Physics Letters, 2013, Vol. 39, No. 9, pp. 818–821. © Pleiades Publishing, Ltd., 2013. Original Russian Text © N.D. Il’inskaya, S.A. Karandashev, N.M. Latnikova, A.A. Lavrov, B.A. Matveev, A.S. Petrov, M.A. Remennyi, E.N. Sevost’yanov, N.M. Stus’, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 18, pp. 45–52.

P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev , M.A. Remennyi, N.M. Stus’,A.A. Usikova, “Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes», Infrared Physics & Technology 64 (2014) 62–65

P.N.Brunkov, N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, and N. M. Stus’, «P-InAsSbP/no-InAs/n+-InAs photodiodes for operation at moderate cooling (150-220 K)» Fizika i Tekhnika Poluprovodnikov, 48(10). pp. 1394-1397 (2014).

P.N.Brunkov, N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, and N. M. Stus’, «P-InAsSbP/no-InAs/n+-InAs photodiodes for operation at moderate cooling (150-220 K)», Semiconductors, 2014, Vol. 48, No. 10, pp. 1359–1362. © Pleiades Publishing, Ltd., 2014, ISSN 1063_7826

S.A. Karandashev, B.A. Matveev, V.I. Ratushnyi, M.A. Remennyi, A.Yu. Rybal’chenko, N.M. Stus’, “Current–Voltage Characteristics and Photocurrent Collection in Radially Symmetric Front Surface Illuminated InAsSb(P) Photodiodes”, ISSN 1063_7842, Technical Physics, 2014, Vol. 59, No. 11, pp. 1631–1635. © Pleiades Publishing, Ltd., 2014. Original Russian Text © 2014, published in Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 11, pp. 52–57.              http://link.springer.com/article/10.1134/S1063784214110115

B.A.Matveev, "Semiconductor mid-IR photodiode", RF patent  № 2521156  after patent application № 2011140568 from 05.10.2011. Published 29.02.2014.

N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and A. A. Usikova,  "The 3x3 matrix based on p-InAsSbP/n-InAs single heterostructure diodes" Applied Physics  2014 N6 p 47 (in Russian)

Brunkov P.N. Il`inskaya N.D., Karandashev S.A., Lavrov A.A., Matveev B.A.,  Remennyi M.A., Stus` N.M., Usikova A.A., «InAsSbP/InAs(0.9)Sb(0.1)/InAs DH photodiodes (lambda(0.1) = 5.2 um, 300 K) operating in the 77-353 K temperature range», Infrared Phys. Technol., v.73 ,pp. 232-237 (2015)

B. Matveev "On the Question of terminology in the medium wave infrared optoelectronics", Photonics #3/2015(51), pp. 152-164.

N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus' and A. A. Usikova, “Photodiode 1x64 Linear Array Based on a Double p-InAsSbP/n-InAs_0.92Sb_0.08/n⁺-InAs Heterostructure”, Semiconductors, 2016, Vol. 50, No. 5, pp. 646–651. DOI: 10.1134/S1063782616050122

P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, N.G. Karpukhina, A.A. Lavrov, B.A. Matveev, M.A. Remennyi a, N.M. Stus’, A.A. Usikova, “Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes”, Infrared Physics and Technology (2016), pp. 542-545, DOI information: 10.1016/j.infrared.2016.04.002

P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus’ a, A.A. Usikova, “P-InAsSbP/n-InAs single heterostructure back-side illuminated 8 x 8 photodiode array», Infrared Physics & Technology 78 (2016) 249–253,  http://dx.doi.org/10.1016/j.infrared.2016.08.013

A.L. Zakgeim, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyy, N.M. Stus’, A.A. Usikova and A.E. Cherniakov, “Spatial Redistribution of Radiation in Flip-Chip Photodiodes Based on Double InAsSbP/InAs Heterostructures”, Semiconductors, 2017, Vol. 51, No. 2, pp. 260–266.

N.D. Il'inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus', A.A. Usikova, "P-InAsSbP/p- InAs 0.88 Sb0.12 /n- InAs 0.88 Sb0.12 /n + -InAs PDs with a smooth p-n junction" Infrared Physics & Technology 88 , 223-227 (2018), doi:  https://doi.org/10.1016/j.infrared.2017.11.003

Natalya D. Il’ inskaya, Sergey A. Karandashev, Al ’bert A. Lavrov, Boris A. Matveev, Maxim A. Remennyi, Nicolay M. Stus ’, and Anna A. Usikova, “InAs0.7Sb0.3 Bulk Photodiodes Operating at Thermoelectric-Cooler Temperatures”, Phys. Status Solidi A 2018, 1700694,    https://doi.org/10.1002/pssa.201700694

N. D. Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and A. A. Usikova, “InAsSbP Photodiodes for 2.6–2.8-um Wavelengths”, Technical Physics, 2018, Vol. 63, No. 2, pp. 226–229.

DOI: 10.1134/S1063784218020172

 

N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi, “Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes”, Semicond. Sci. Technol. 33 (2018) 065016 (5pp), 

https://doi.org/10.1088/1361-6641/aac15d

 

N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi, “Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes”, Semicond. Sci. Technol.34(2019) 015013 (5pp)  

DOI: 10.1088/1361-6641/aaf0c6

 

B. A. Matveev, V. I. Ratushnyi, and A. Yu. Rybal’chenko

“Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides”

ISSN 1063-7842, Technical Physics, 2019, Vol. 64, No. 8, pp. 1164–1167. Russian Text published in Zhurnal Tekhnicheskoi Fiziki, 2019, Vol. 89, No. 8, pp. 1233–1237.

DOI: 10.1134/S1063784219080140

 

N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi, “Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes”, October 2019,  Semiconductor Science and Technology 34(10):105015

DOI: 10.1088/1361-6641/ab3c3e

 

S A Karandashev, A A Klimov, R E Kunkov, A A Lavrov, T S Lukhmyrina, B A Matveev, M A Remennyi, and A A Usikova, “Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure”, December 2019 Journal of Physics Conference Series 1410:012028

DOI: 10.1088/1742-6596/1410/1/012028

 

B. A. Matveev, V. I. Ratushnyi, and A. Yu. Rybal’chenko, “Localization of Current Flow in Thermophotovoltaic Converters Based on InAsSbP/InAs Double Heterostructures”, Technical Physics, 2020, Vol. 65, No. 5, pp. 799–804

DOI: 10.1134/S1063784220050187

http://link.springer.com/article/10.1134/S1063784220050187

https://rdcu.be/b4y1G

 

N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi, “Low frequency noise in reverse biased double heterostructure P-InAsSbP/ n-InAs infrared photodiodes”, Semicond. Sci. Technol. 35 (2020) 075010 (5pp) 

https://doi.org/10.1088/1361-6641/ab8756

 

N Dyakonova, Sergei A. Karandashev, M. E. Levinshtein, B A Matveev and M A Remennyi, " Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: photovoltaic mode and forward bias", Infrared Physics & Technology

Available online 18 August 2020, 103460

DOI: 10.1016/j.infrared.2020.103460

 

A A Klimov, R E Kunkov, T S Lukhmyrina, B A Matveev, N M Lebedevaand M A Remennyi,

“Room temperature mid-IR two-color photodiodes with InAs and InAs0.9Sb0.1 absorbing layers”, Journal of Physics: Conference Series 1697 (2020) 012180

International Conference PhysicA.SPb/2020   IOP Publishing

doi:10.1088/1742-6596/1697/1/012180

 

R.E. Kunkov, A.A. Klimov, N.M. Lebedeva, T.C. Lukhmyrina, B.А. Matveev, M.А. Remennyy,

“Photoelectric properties of heterostructures based on InAsSbх solid solutions (0.3 <x <0.35)”, 2020 J. Phys.: Conf. Ser. 1695 012077

doi:10.1088/1742-6596/1695/1/012077

Klimov A.A., Kunkov R.E., Lavrov A.A., Lebedeva N.M., Lukhmyrina T.C., Matveev B.A., Remennyi M.A.,  « Long-wave infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates»,
Proceedings of the  22ND RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, RYCPS 2020.

 J. Phys.: Conf. Ser., v.1851, 1 ArtNo:#012019, 2021 IOP Publishing Ltd , ISSN:1742-6588
22nd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2020; St.Petersburg, Russian Federation; 23-27 November 2020

 ^{Lavrov A.A., Matveev B.A., Remennyi M.A., useful model on "Mid-IR Dual band PD" № 203297 after application № 2020123292 from 07 07 2020.}