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___________________________________________________________________
LEDs (8)
Boris Matveev, Maxim Remennyy, Karandashev Sergey, Kimmo Keränen, Heini
Saloniemi, Jyrki Ollila, Tom Kuusela, Ismo Kauppinen,
«Microimmersion lens
LEDs for portable photoacoustic methane sensors», IMCS 2012 -
The 14th International Meeting on Chemical Sensors May 20 - 23, 2012, Nürnberg/Nuremberg,
Germany, p.241-243, DOI 10.5162/IMCS2012/2.5.5
Parthiban Santhanam, Duanni Huang, Rajeev J. Ram, Maxim A. Remennyi, and Boris
A. Matveev,
“Room Temperature
Thermo-Electric Pumping in mid-Infrared Light-Emitting Diodes”,
Appl. Phys. Lett. 103 (19), 183513 (1 November 2013); doi: 10.1063/1.4828566
B.
Matveev,
“LEDs Based On Heterostructures À3Â5 In Gas Analysis
Instrument Engineering".
Photonics, #6 (December 2014).
Il`inskaya N.D.; Karandashev S.A.; Karpukhina N.G.; Lavrov A.A.; Matveev B.A.;
Remennyi M.A.; Stus N.M.; Usikova A.A., " The 3x3 matrix based on p-InAsSbP/n-InAs
single heterostructure diodes",
Applied Physics,
issue 6, 2014, Pages 47-51
B. Matveev,
“Surprises of
Medium-Wave IR LEDs Based on À3Â5 Heterostructures”,
Photonics, v.2 (50) pp.: 62-69
(2015)
S. A. Karandashev, B. A. Matveev, and M. A. Remennyi, «Indium
Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)»,
Semiconductors, 2019, Vol. 53, No. 2, pp. 139–149.
N. Dyakonova, S. A. Karandashev, M. E. Levinshtein, B. A.
Matveev , M. A. Remennyi,
«Low
frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR
light emitting diodes»,
Infrared Physics and Technology,
Volume 125, September
2022, 104301
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Negative Luminescence devices (1)
____________________________________________________________________
Photodiodes (30)
N.
D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, and N. M.
Stus’, “Uncooled Photodiodes Based on InAsSb(P) with Long-Wavelength
Sensitivity Boundary at λ = 5.8 um”, ISSN 1063_7850, Technical Physics
Letters, 2012, Vol. 38, No. 3, pp. 242–244..Original Russian Pis’ma v
Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 5, pp. 85–90. (DOI)
10.1134/S1063785012030078
N. D. Il’inskaya, A. L. Zakgeim, S. A. Karandashev, B. A. Matveev, V. I.
Ratushnyi, M. A. Remennyi, A. Yu. Rybal’chenko, N. M. Stus’, and A. E.
Chernyakov, "Front Surface Illuminated InAsSb Photodiodes
(Long-Wavelength Cutoff λ0.1 = 4.5 um) Operating at Temperatures
of 25–80°C", Semiconductors, 2012, Vol. 46, No. 5, pp. 690–695,
Original Russian Text © N.D. Il’inskaya, A.L. Zakgeim, S.A. Karandashev,
B.A. Matveev, V.I. Ratushnyi, M.A. Remennyi, A.Yu. Rybal’chenko, N.M. Stus’,
A.E. Chernyakov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012,
Vol. 46, No. 5, pp. 708–713.
N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A.
Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevost’yanov, and N. M. Stus’,
“Cooled Photodiodes Based on a Type-II Single p-InAsSbP/n-InAs
Heterostructure “ISSN 1063_7850, Technical Physics Letters, 2013, Vol. 39,
No. 9, pp. 818–821. © Pleiades Publishing, Ltd., 2013. Original Russian Text
© N.D. Il’inskaya, S.A. Karandashev, N.M. Latnikova, A.A. Lavrov, B.A.
Matveev, A.S. Petrov, M.A. Remennyi, E.N. Sevost’yanov, N.M. Stus’, 2013,
published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 18,
pp. 45–52.
P.N. Brunkov, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev ,
M.A. Remennyi, N.M. Stus’,A.A. Usikova, “Cooled P-InAsSbP/n-InAs/N-InAsSbP
double heterostructure photodiodes», Infrared Physics & Technology 64 (2014)
62–65
P.N.Brunkov, N. D.
Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev,
A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, and N. M. Stus’, «P-InAsSbP/no-InAs/n+-InAs
photodiodes for operation at moderate cooling (150-220 K)»
Fizika i Tekhnika
Poluprovodnikov, 48(10). pp. 1394-1397 (2014).
P.N.Brunkov, N. D.
Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev,
A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, and N. M. Stus’,
«P-InAsSbP/no-InAs/n+-InAs photodiodes for operation at moderate cooling
(150-220 K)», Semiconductors, 2014, Vol. 48, No. 10, pp. 1359–1362. ©
Pleiades Publishing, Ltd., 2014, ISSN 1063_7826
S.A. Karandashev, B.A.
Matveev, V.I. Ratushnyi, M.A. Remennyi, A.Yu. Rybal’chenko, N.M. Stus’,
“Current–Voltage Characteristics and Photocurrent Collection in Radially
Symmetric Front Surface Illuminated InAsSb(P) Photodiodes”, ISSN 1063_7842,
Technical Physics, 2014, Vol. 59, No. 11, pp. 1631–1635. © Pleiades
Publishing, Ltd., 2014. Original Russian Text © 2014, published in Zhurnal
Tekhnicheskoi Fiziki, 2014, Vol. 84, No. 11, pp. 52–57.
http://link.springer.com/article/10.1134/S1063784214110115
B.A.Matveev, "Semiconductor mid-IR photodiode", RF patent
¹ 2521156
after
patent application ¹ 2011140568 from 05.10.2011. Published 29.02.2014.
N. D. Il’inskaya,
S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A.
Remennyi, N. M. Stus’, and A. A. Usikova, "The 3x3 matrix based on
p-InAsSbP/n-InAs single heterostructure diodes"
Applied Physics 2014
N6 p 47
(in Russian)
Brunkov P.N.
Il`inskaya N.D., Karandashev S.A., Lavrov A.A., Matveev B.A., Remennyi
M.A., Stus` N.M., Usikova A.A.,
«InAsSbP/InAs(0.9)Sb(0.1)/InAs
DH photodiodes (lambda(0.1) = 5.2 um, 300 K) operating in the 77-353 K
temperature range»,
Infrared Phys. Technol., v.73 ,pp. 232-237 (2015)
B. Matveev
"On the Question of terminology in the
medium wave infrared optoelectronics",
Photonics
#3/2015(51), pp. 152-164.
N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A.
Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus' and
A. A. Usikova,
“Photodiode 1x64
Linear Array Based on a Double
p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs
Heterostructure”,
Semiconductors, 2016, Vol. 50, No. 5, pp. 646–651. DOI:
10.1134/S1063782616050122
P.N.
Brunkov, N.D. Il’inskaya, S.A. Karandashev, N.G. Karpukhina, A.A. Lavrov,
B.A. Matveev, M.A. Remennyi a, N.M. Stus’, A.A. Usikova, “Low dark current
P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side
illuminated photodiodes”,
Infrared Physics
and Technology (2016), pp. 542-545, DOI information:
10.1016/j.infrared.2016.04.002
P.N.
Brunkov, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A.
Remennyi, N.M. Stus’ a, A.A. Usikova,
“P-InAsSbP/n-InAs
single heterostructure back-side illuminated 8 x 8 photodiode array»,
Infrared Physics & Technology 78 (2016) 249–253,
http://dx.doi.org/10.1016/j.infrared.2016.08.013
A.L. Zakgeim, N.D. Il’inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev,
M.A. Remennyy, N.M. Stus’, A.A. Usikova and A.E. Cherniakov,
“Spatial Redistribution of Radiation in
Flip-Chip Photodiodes Based on Double InAsSbP/InAs Heterostructures”,
Semiconductors, 2017, Vol. 51, No. 2, pp. 260–266.
N.D. Il'inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyi,
N.M. Stus', A.A. Usikova,
"P-InAsSbP/p- InAs
0.88 Sb0.12 /n- InAs 0.88 Sb0.12 /n + -InAs PDs with a smooth p-n junction" Infrared
Physics & Technology 88 , 223-227 (2018), doi: https://doi.org/10.1016/j.infrared.2017.11.003
Natalya D. Il’ inskaya, Sergey A. Karandashev, Al ’bert A. Lavrov, Boris A.
Matveev, Maxim A. Remennyi, Nicolay M. Stus ’, and Anna A. Usikova,
“InAs0.7Sb0.3 Bulk Photodiodes Operating at Thermoelectric-Cooler
Temperatures”, Phys. Status Solidi A 2018, 1700694,
https://doi.org/10.1002/pssa.201700694
N.
D. Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A.
Remennyi, N. M. Stus’, and A. A. Usikova,
“InAsSbP
Photodiodes for 2.6–2.8-um Wavelengths”, Technical Physics,
2018, Vol. 63, No. 2, pp. 226–229.
DOI:
10.1134/S1063784218020172
N
Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi,
“Low frequency
noise in p-InAsSbP/n-InAs infrared photodiodes”, Semicond.
Sci. Technol. 33 (2018) 065016 (5pp),
https://doi.org/10.1088/1361-6641/aac15d
N
Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev and M A Remennyi,
“Low frequency noise in reverse biased P-InAsSbP/n-InAs
infrared photodiodes”, Semicond. Sci. Technol.34(2019) 015013 (5pp)
DOI:
10.1088/1361-6641/aaf0c6
B. A. Matveev, V. I. Ratushnyi, and A. Yu. Rybal’chenko
“Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs
Converters Irradiated on p- and n-Sides”
ISSN 1063-7842, Technical Physics, 2019, Vol. 64, No. 8, pp.
1164–1167. Russian Text published in Zhurnal Tekhnicheskoi Fiziki, 2019,
Vol. 89, No. 8, pp. 1233–1237.
DOI: 10.1134/S1063784219080140
N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev
and M A Remennyi, “Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP
double heterostructure infrared photodiodes”, October 2019, Semiconductor
Science and Technology 34(10):105015
DOI: 10.1088/1361-6641/ab3c3e
S A Karandashev, A A Klimov, R E Kunkov, A A Lavrov, T S
Lukhmyrina, B A Matveev, M A Remennyi, and A A Usikova,
“Substrate-removed
flip-chip photodiode array based on InAsSbP/InAs double heterostructure”,
December 2019 Journal of Physics Conference Series 1410:012028
DOI: 10.1088/1742-6596/1410/1/012028
B. A.
Matveev, V. I. Ratushnyi, and A. Yu. Rybal’chenko, “Localization of Current
Flow in Thermophotovoltaic Converters Based on InAsSbP/InAs Double
Heterostructures”, Technical Physics, 2020, Vol. 65, No. 5, pp. 799–804
DOI:
10.1134/S1063784220050187
http://link.springer.com/article/10.1134/S1063784220050187
https://rdcu.be/b4y1G
N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev
and M A Remennyi, “Low frequency noise in reverse biased double
heterostructure P-InAsSbP/ n-InAs infrared photodiodes”, Semicond. Sci.
Technol. 35 (2020) 075010 (5pp)
https://doi.org/10.1088/1361-6641/ab8756
N Dyakonova, Sergei A. Karandashev, M. E. Levinshtein,
B A Matveev and M A Remennyi, " Low frequency noise in double
heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic
temperature: photovoltaic mode and forward bias",
Infrared Physics & Technology
Available online 18 August 2020, 103460
DOI: 10.1016/j.infrared.2020.103460
A
A Klimov, R E Kunkov, T S Lukhmyrina, B A Matveev, N M Lebedevaand
M A Remennyi,
“Room temperature mid-IR two-color photodiodes with InAs and InAs0.9Sb0.1
absorbing layers”, Journal of Physics: Conference
Series 1697 (2020) 012180
International Conference PhysicA.SPb/2020 IOP Publishing
doi:10.1088/1742-6596/1697/1/012180
R.E. Kunkov, A.A. Klimov, N.M. Lebedeva, T.C. Lukhmyrina, B.À.
Matveev, M.À. Remennyy,
“Photoelectric properties of heterostructures based on InAsSbõ
solid solutions (0.3 <x <0.35)”,
2020 J. Phys.: Conf. Ser. 1695 012077
doi:10.1088/1742-6596/1695/1/012077
Klimov A.A., Kunkov R.E., Lavrov A.A., Lebedeva N.M.,
Lukhmyrina T.C., Matveev B.A., Remennyi M.A.,
« Long-wave
infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates»,
Proceedings of the
22ND RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS
AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, RYCPS 2020.
J.
Phys.: Conf. Ser.,
v.1851, 1 ArtNo:#012019,
2021 IOP
Publishing Ltd ,
ISSN:1742-6588
22nd Russian
Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and
Nanoelectronics, RYCPS 2020; St.Petersburg, Russian Federation; 23-27
November 2020
Lavrov A.A.,
Matveev B.A., Remennyi M.A., useful model on "Mid-IR Dual band PD" ¹ 203297
after application ¹ 2020123292 from 07 07 2020.
Sensors (10)
K. Keränen,
,J.
Ollila,
H. Saloniemi,
B. Matveev,
J. Raittila,
A. Helle,
I. Kauppinen,
T. Kuusela,
L. Pierno,
P. Karioja,
M. Karppinen,
“Portable Methane Sensor Demonstrator based on LTCC Differential Photo Acoustic
Cell and Silicon Cantilever”,
Procedia Engineering,
Volume 47,
2012, Pages 1438–1441.
G.Yu.Sotnikova,
S.E.Aleksandrov, G.A.Gavrilov, A.A.Kapralov, B.A.Matveev, M.A.Remennyi,
M.Saadaoui, D.Zymelka, «Radiometric temperature measurements using In(Ga)As(Sb)
backside illuminated photodiodes»,
Abstract of the 42-th Freiburg Infrared
Colloquium, 3-4 March 2015, pp.89-90
Zymelka D., Matveev B., Aleksandrov S.,
Sotnikova G., Gavrilov G., Saadaoui M.,"Time-resolved study of variable
frequency microwave processing of silver nanoparticles printed onto plastic
substrates",
Flex. Print. Electron. 2 (2017) 045006 (pp.1-10)( DOI: 10.1088/2058-8585/aa900a
)
S.E. Aleksandrov, G.A. Gavrilov, A.A.
Kapralov, B.A. Matveev, K.L. Muratikov, and G.Yu. Sotnikova, (2018),
“Optoelectronic
Methods of IR-Photometry in Solving Thermal and Physical Problems”
in VII International Conference on Photonics and Information Optics, Energy &
Physics, pages 349–361. DOI 10.18502/ken.v3i3.2048
S. E. Aleksandrov, G. A. Gavrilov, A. A. Kapralov, B. A. Matveev, M. A.
Remennyi, and G. Yu. Sotnikova,
“InAsSb Diode Optical
Pairs for Real-Time Carbon Dioxide Sensors”, Technical
Physics, 2018, Vol. 63, No. 9, pp. 1390–1395. ISSN 1063-7842
B. A. Matveev, and G. Yu. Sotnikova, “Midinfrared Light-Emitting Diodes Based
on À3Â5 Heterostructures in Gas-Analyzer-Equipment Engineering: Potential and
Applications in 2014–2018”, Optics and Spectroscopy, 2019, Vol. 127, No. 2, pp.
322–327
DOI: 10.1134/S0030400X19080198
B. A. Matveev, "Monolithically
integrated evanescent wave sensor"
RF patent ¹ 2727560
S. A. Karandashev, B. A. Matveev, M. A. Remennyi and Mohamed
Ben Chouikha,
patent # 2753854 on “Chemical
sensor” after
application ¹ 2020141070 with priority date 11 December 2020.
N.
Dyakonova, S. A. Karandashev, M. E. Levinshtein, B. A. Matveev and M. A.
Remennyi, A. A. Usikova,
“Low
frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode
pairs”,
Infrared Physics and Technology,
Volume 117, September
2021, 103867, doi:
10.1016/j.infrared.2021.103867
S. A.
Karandashev, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, and A. A. Usikova,“On
the Use of Indium Arsenide as the Waveguide Material in the Measurements by
Attenuated Total Reflectance”,
Optics and
Spectroscopy, 2021, Vol. 129, No. 9, pp. 1333–1337. © Pleiades Publishing, Ltd.,
2021. ISSN 0030-400X,
DOI: 10.1134/S0030400X21090101
Russian Text © The Author(s), 2021, published in Optika i
Spektroskopiya, 2021, Vol. 129, No. 9, pp. 1193–1197.
S. A. Karandashev, T. S. Lukhmyrina, B. A. Matveev, M. A.
Remennyi, and A. A. Usikova,
"P-InAsSbP/n-InAs
double heterostructure as an on-chip mid‐IR evanescent wave sensor of liquids",
Physica Status Solidi (A) Applications and Materials. DOI: 10.1002/pssa.202100456,
Volume 219, Issue 2 2100456
(January
2022).
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Miscellaneous (7)
Usikova A.A.; Il`inskaya N.D.; Matveev
B.A.; Shubina T.V.; Kop`ev P.S., “Photonic crystals and Bragg gratings for the
mid-IR and terahertz spectral ranges”,
Semiconductors, December 2013, Volume
47,
Issue 12,
pp 1570-1573
Junting Liu,
Vladislav Khayrudinov, He Yang, Yue Sun, Boris Matveev, Maxim Remennyi, Kejian
Yang, Tuomas Haggren, Harri Lipsanen, Fengqiu Wang, Baitao Zhang, Jingliang He,
«InAs-Nanowire-Based Broadband Ultrafast Optical Switch», J. Phys. Chem. Lett.
2019, 10, 15, 4429-4436
Publication Date: July 18, 2019
https://doi.org/10.1021/acs.jpclett.9b01626
Vladislav
Khayrudinov, Tuomas Haggren, Maxim Remennyy, Prokhor Anatolevich Alekseev, Boris
Matveev, Harri Kalevi Lipsanen, «Light-emitting InAs nanowires grown by MOVPE
directly on flexible plastic substrates», May 2019,
DOI: 10.1109/ICIPRM.2019.8819277,
Conference: 2019 Compound Semiconductor Week (CSW).
Vladislav Khayrudinov,
Maxim Remennyi, Vidur Raj, Prokhor Alekseev, Boris Matveev, Harri Lipsanen, and
Tuomas Haggren, “Direct Growth of Light-Emitting III–V Nanowires on Flexible
Plastic Substrates” , ACS Nano 2020, A-H, Publication Date: May 21, 2020
https://doi.org/10.1021/acsnano.0c03184
https://pubs.acs.org/action/showCitFormats?doi=10.1021/acsnano.0c03184&ref=pdf
Vladislav
Khayrudinov, Maxim Remennyi, Vidur Raj, Prokhor Alekseev, Boris Matveev, Harri
Lipsanen, and Tuomas Haggren, “Direct Growth of Light-Emitting III–V Nanowires
on Flexible Plastic Substrates” , ACS Nano 2020, A-H, Publication Date:
May 21, 2020
T S Lukhmyrina, M S Shestakov, A V Shvidchenko and B A Matveev,
“Morphology and
redispersibility of silver nanoparticles prepared by chemical reduction”,
2020 J. Phys.: Conf. Ser. 1695 012187
doi:10.1088/1742-6596/1695/1/012187
https://iopscience.iop.org/article/10.1088/1742-6596/1697/1/012180
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