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Band diagrams of three typical LED/PD structures for λ = 3.4 μm (two on the left) and 2.9 μm (on the right) See more details in N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyy, A. Yu. Rybal’chenko, and N. M. Stus’, ”Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes”, Semiconductors, 2011, Vol. 45, No. 4, pp. 543–549. © Pleiades Publishing, Ltd., 2011. ISSN 1063_7826, DOI 10.1134/S1063782611040245 Original Russian Text © N.V. Zotova, S.A. Karandashev, B.A. Matveev, M.A. Remennyy, A.Yu. Rybal’chenko, N.M. Stus’, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 4, pp. 554–559. http://www.springerlink.com/openurl.asp?genre=article&id=doi:10.1134/S1063782611040245 |
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