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Examples of IR images of the  flat plate diodes as taken from InAs microscope sensitive at 2.9 μm (near field imaging)

 

Collection of IR images

1

U>0

p-GaSb LED with nonuniform radiation pattern

(0.5x0.5 mm).

Semiconductors, 2009, Vol. 43, No. 5, pp. 662667

InAs PD with point contact at forward bias

(0.5x0.5 mm).

Semiconductors, 2011, Vol. 45, No. 4, pp. 543549

2

U=0

InGaAsSb LED array with external lightning

(0.5x0.5 mm).

Proc. of SPIE Vol. 7223 72231B-1

InGaAsSb LED array at thermodynamic balance

(0.5x0.5 mm)

Proc. of SPIE Vol. 7223 72231B-1

3

U>0

InGaAsSb 1x4 LED array with photonics crystal structure (all 4 elements are biased)(2x2 mm) .

Proc. of SPIE Vol. 7609, 76090I-1 -5

InGaAsSb 1x4 LED array with photonics crystal structure (only 2 elements are biased)(2x2 mm).

Proc. of SPIE Vol. 7609, 76090I-1 -5

 

4

U> 0

U<0

InGaAsSb 1x4 LED array with reverse (left) and forward (right) biasing of elements (0.5x0.5 mm).

Proc. of SPIE Vol. 7223 72231B-1

InAs 3x3 LED array with 4 elements at reverse bias and 5 -- at forward bias (2x2 mm).

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