Technical Physics Letters -- December 2002 -- Volume 28, Issue 12, pp. 1001-1003

Two-Wavelength Emission from a GaInPAsSb/InAs Structure with a Broken-Gap Isotype Heterojunction and a p–n Junction in the Substrate

B. A. Matveev, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin and V. V. Shustov

 An electroluminescent structure of the P-Ga_0.92In_0.08P_0.05As_0.08Sb_0.87/p-InAs/n-InAs type containing a broken-gap P–p isotype heterojunction and a p–n junction in the substrate volume is obtained and is shown to exhibit emission peaks at = 1.9 and 3.1 µm at 77 K and 2.1 and 3.6 µm at 300 K. The longwave luminescence band is due to radiative recombination in the p-region of the p–n junction. The shortwave luminescence band is due to recombination in the P-GaInPAsSb wide-bandgap solid solution layer to which nonequilibrium electrons are supplied from the p–n junction in the substrate volume.

Full Russian Text       Full English Text