Proc. SPIE Vol 4650, p.173-178, Photodetector Materials and Devices VII (2002)

We describe Gd doped backside illuminated In(Ga)As double and single heterostructure photodiodes with InAsSbP cladding layers grown onto heavily doped n+-InAs transparent substrate of the episide-down bonding design. The advantages of the construction include improvement of material quality due to rare earth gettering effect and the possibility of coupling with fibers or immersion lenses through the contact free surface. The report presents U-I, spectral response and sensitivity of narrow band (3.1-3.4 mm) photodiodes at 20-180 ^oC temperature range with RoA product as high as 2 Wcm² at room temperature and serial resistance as low as 0.1 W