Physica E: Low-dimensional Systems and Nanostructures, Vol. 20(3-4), pp. 548-552 ( 2004)

InGaAsSb negative luminescent devices with built-in cavities emitting at 3.9 mm

M. A. Remennyi, B. A. Matveev, N. V. Zotova, S. A. Karandashev, N. M. Stus' and G. N. Talalakin

An As₂S₃ fiber coupled to an InGaAsSb photodiode was used to record the radiation distribution over the emitting surface in InGaAsSb episide-down-bonded negative luminescence devices (l=3.9 µm). Emission spectra were recorded under forward and reverse bias and both were modulated by a Fabry–Perot resonator formed by the anode contact and emitting InAs surface in 45-mm thick diodes. The results show that the current/emission distribution crowds in the vicinity of the contact under forward bias, while a uniform current/emission distribution over the emitting surface is seen under reverse bias.