Light emitting diodes operating in the 2.8¸ 2.9 m m spectral region have been fabricated from InGaAs and InAsSbP p-n structures grown onto n- and heavily doped n⁺-InAs substrates. Due to high transparency of n⁺-InAs and n-InGaAs buffer the episide down construction was implemented for LED and photodiode operation with output power and detectivity as high as 400 m W (I=1A) and 1.5´ 10¹⁰ cm Hz^1/2 W^-1 correspondingly. Operation of the LEDs and optically coupled LED-photodiode pairs was demonstrated in the 15¸ 190^oC temperature range.