Semiconductors, Vol. 35, No. 10, 2001, pp. 1208–1212.

High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (l = 3.3 mm)

M. Aydaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and G. N. Talalakin

InGaAsSb(Gd)/InAsSbP double heterostructure lasers ( 3.3 µm, T = 77 K) yield a multimode power of 1.56 W in pulsed operation (pulse width 30 µs, repetition frequency f = 500 Hz) and 160 mW in the continuous-wave (CW) case. In the single-mode CW operation, the power is 18.7 mW. It is shown that heating of the active region is responsible for sublinear light–current characteristics in "long-cavity" lasers, whereas in "short-cavity" (L = 140–300 µm) lasers the power is mainly limited by internal losses.