Semiconductors Vol.34 (2000), No 7, pp.848-852

InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (l=3.0-3.3 mm) for Diode Laser Spectroscopy

M.Aidaraliev, T. Beyer, N.V.Zotova, S.A.Karandashov, B.A. Matveev, M.A.Remennyi, N.M.Stus' and G.N. Talalakin

Data on threshold currents, the differential quantum efficiency, the emission spectrum, current tuning, and radiation power of mesastripe InGaAsSb(Gd)/InAsSbP double heterostructure lasers with  wavelength 3.0–3.3 µm and a cavity length of 70–150 µm in a temperature range of 50–107 K are reported. In the experiments, the threshold currents I_th < 10 mA, a total output power of 0.5 mW/facet, and a single-mode power of 0.43 mW at 77 K in the cw regime were obtained. Lasers operated in the single-mode regime at currents I = 6I_th, the spectral purity was as high as 650 : 1, the tuning rate was 210 cm^–1/A, and the tuning range was 10 cm^–1 wide. An example of methane detection at 3028.75 cm^–1 is presented.