Semiconductors, Vol.34, No 4, 2000, pp.488-492

Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (l =3.0-3.6 mm)

M.Aidaraliev, N.V.Zotova, S.A.Karandashov, B.A. Matveev, M.A.Remennyi, N.M.Stus', G.N. Talalakin , T. Beyer and R. Brunner

It is shown that an increase in the internal losses beyond the lasing threshold in the lasers based on InGaAsSb/InAsSbP double heterostructures (wavelength range 3.0–3.6 µm, temperature T = 77 K) causes the current-related shift of the laser mode to shorter wavelengths. This shift is as large as 80 cm^–1/A and can explain the broadening of the laser line from 5 to 7 MGz as the pump current increases.