Semiconductors Vol.35 (2001), No 3, pp.371 – 374

Optically Pumped Mid-Infrared InGaAs(Sb) LEDs

N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, and V. V. Shustov

Spectral and power characteristics of optically pumped light-emitting diodes (LEDs) for the 3.1–3.6 µm range are presented. The LED structure contains narrow-gap InGaAs or InGaAsSb layers on an n⁺-InAs substrate; the pumping is done with a GaAs LED. A conversion efficiency of 90 mW/(A cm²), comparable with that for injection LEDs, is achieved.