Semiconductors Vol.35 (2001), No 3, pp.335 – 338

Negative Luminescence in p-InAsSbP/n-InAs Diodes

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, and G. N. Talalakin

Negative luminescence (NL) at wavelength 3.8 µm from reverse-biased p-InAsSbP/n-InAs diode heterostructures has been studied at temperatures of 70–180°C. The NL power increases with temperature and exceeds the power of direct-bias electroluminescence at temperatures over 110°C. An NL power of 5 mW/cm², efficiency of 60%, and a conversion efficiency of 25 mW/(A cm²) have been obtained at 160°C.