Semiconductors -- December 2001 -- Volume 35, Issue 12 pp. 1369-1371

Radiative Recombination via Direct Optical Transitions in InGaxAs (0 <x< 0.16) Solid Solutions

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin

Photoluminescence from In_1 – xGa_xAs solid solution epilayers LPE-grown on (111)InAs substrates and electroluminescence from p–n junctions on their bases have been studied in the temperature range 77–450 K. Despite the negative lattice mismatch between epilayer and substrate, radiative recombination in epilayers occurs via direct optical transitions ensuring a high internal quantum efficiency of luminescence (6% at 295 K).