Semiconductors -- May 2001 -- Volume 35, Issue 5 pp. 598-604

Light Emitting Diodes for the Spectral Range 3.3–4.3 µm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C (Part 2)

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin

Light-emitting diodes (LEDs) based on p–n homo- and heterostructures with InAsSb(P) and InGaAs active layers have been designed and studied. An emission power of 0.2 (4.3 µm) to 1.33 mW (3.3 µm) and a conversion efficiency of 30 (InAsSbP, 4.3 µm) to 340 mW/(A cm²) (InAsSb/InAsSbP double heterostructure (DH), 4.0 µm) have been achieved. The conversion efficiency decreases with increasing current, mainly owing to the Joule heating of the p–n homojunctions. In DH LEDs, the fact that the output power tends to a constant value with increasing current is not associated with active region heating. On raising the temperature from 20 to 180°C, the emission power of the 3.3 and 4.3 µm LEDs decreases, respectively, 7- and 14-fold, to become 50 (at 1.5 A) and 7 µW (at 3 A) at 180°C.