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Semiconductors -- January 2000 -- Volume 34, Issue 1 pp. 104-107 Light Emitting Diodes for the Spectral Range of 3.3–4.3µm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin Light emitting diodes (LEDs) with wavelength 3.4 and 4.3µm (t = 20°C) were studied at elevated temperatures. It is demonstrated that LEDs operating in the temperature range t = 20–180°C can be described using the classical concepts of injection radiation sources and the processes of charge carrier recombination. The temperature dependences of reverse currents in the saturation regions of current–voltage characteristics are consistent with the increase in the intrinsic-carrier concentration according to the Shockley theory. The emission spectra are described on the assumption of the direct band-to-band transitions, spherically symmetric bands, and thermalized charge carriers. The current–power characteristics are proportional to I3/2 suggesting that the contribution of the nonradiative Auger recombination is dominant. The radiation power decreases exponentially with the temperature which is characteristic of the CHSH and CHCC processes. |
