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Scientific investigations

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Application of dual-band PD (3.4+4.2 um) for determination of fast temperature changes during plasma gun experiments ( Воронин А.В., Александров С.Е., Бер Б.Я., Борматов А.А., Гусев В.К., *Демина Е.В., Новохацкий А.Н., Сотникова Г.Ю.,   "Исследование вольфрама в потоке гелиевой плазменной струи". (№10 in Russian)
http://www.fpl.gpi.ru/Zvenigorod/XLII/M.html#S1

See also:

Experimental studies of cyclical plasma effects on tungsten (see also paper in Tech.Phys.2016)

 

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                V. G. Kesler, A. A. Guzev, A. P. Kovchavtsev, A. V. Tsarenko, and Z. V. Panov

MIS Photodiode with an InAs-Based Tunnel-Transparent Oxide Layer

                Optoelectronics, Instrumentation and Data Processing, 2014, Vol.50 ,No.1, pp.87–95,     DOI: 10.3103/S8756699014010117

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Dodd J. Gray Jr., Parthiban Santhanam, and Rajeev J. Ram

"Design for enhanced thermo-electric pumping in light emitting diodes"

Abstract

We present a strategy for optimization of thermo-electric pumping in light emitting diodes (LEDs).We use a finite element model for charge transport in a GaInAsSb/GaSb double hetero-junction LED that is verified experimentally to consider optimal design and operation of low-bias LEDs. The wall-plug efficiency is shown to be enhanced by over 200 at nanowatt power levels and 20  at microwatt power levels. A design for room-temperature operation of a 2.2 lm LED with 100% efficiency is proposed—this represents a 110 C reduction of the temperature required to observe unity efficiency.

Applied Physics Letters 103, 123503 (2013); doi: 10.1063/1.4821266

 

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Parthiban Santhanam, Dodd Joseph Gray, Jr., and Rajeev J. Ram,

"Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency"
Abstract

A heated semiconductor light-emitting diode at low forward bias voltage V <kBT=q is shown to use electrical work to pump heat from the lattice to the photon field. Here the rates of both radiative and nonradiative recombination have contributions at linear order in V. As a result the device’s wall-plug (i.e., power conversion) efficiency is inversely proportional to its output power and diverges as V approaches zero. Experiments directly confirm for the first time that this behavior continues beyond the conventional limit of unity electrical-to-optical power conversion efficiency.

Phys. Rev. Lett. 108, 097403 (2012).
DOI: 10.1103/PhysRevLett.108.097403 PACS numbers: 78.20.nd, 44.40.+a, 72.20.Pa, 78.60.Fi

 

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I. I. Lee, V. M. Bazovkin, N. A. Valisheva, A. A. Guzev, A. P. Kovchavtsev, G. L. Kuryshev, V. G. Polovinkin

The focal plane array based on MIS-photodiodes on InAs for pulse optical data registration

Abstract

The focal plane array (IR FPA) on the basis of metal-insulator-structure (MIS) photodetectors on InAs auto-epitaxial substrate of 8×8 elements is designed and fabricated. It is shown, that the IR FPA provides definition of coordinate and time of arrival of optical pulse signals with energy 8'E-17J/element and accuracy not worse 100 ns.

Prikladnaya Fizika n2,  pp.68-72 (2007)

Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Science,
Novosibirsk, Russia

 

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Irina L. Drichko, Andrey M. Diakonov, Ivan Yu. Smirnova,
Valery V. Preobrazhenskii,  Alexandr I. Toropov, Yuri M. Galperina,

"DX-centers and long-term effects in the high-frequency hopping conductance in Si-doped GaAs=Al0:3Ga0:7As heterostructures in the quantum Hall regime: acoustical studies"

Abstract
It is discovered that both high-frequency (hf) hopping conductance and electron density in the 2D channel, ns, in Si -doped and modulation-doped GaAs=Al0:3Ga0:7As heterostructures at the plateaus of the integer quantum Hall e$ect depend on cooling rate of the samples. Furthermore, consecutive IR illumination leads to a persistent hf hopping photoconductance, which decreases when the illumination intensity increases, while ns increases. The persistent hf hopping photoconductance occurs when the illumination frequency exceeds a threshold, which is between 0.48 and 0:86 eV. The results are attributed to two-electron defects (so-called DX-centers) located in the Si-doped layer of the Al0:3Ga0:7As heterostructure.
Physica E 17 (2003) 276 – 279

 

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S.McCabe and B.D.MacCraith,

“Novel mid-infrared LED as a source for optical fibre gas sensing”,

Abstract

A mid-infra-red LED emitting at 3.36µm (FWHM 400nm) is used as a source for evanescent wave flammable gas sensing with fluoride fibre. The system described has a detection limit for propane of 1.5%. These preliminary data demonstrate the potential for distributed gas sensing using novel LED sources

Electron. Lett., vol. 29, pp.1719-1721 (1993)